G2002L MOSFET Datasheet: N-Ch, 200V, 2A. Full specification with pinout and replacement list

G2002L Specs and Replacement

Type Designator: G2002L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm

Package: SOT-23-3L

G2002L substitution

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G2002L datasheet

..1. Size:1473K gfd
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G2002L Description uses advanced trench technology and The G2002L D design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. G General Features S VDS = 200V,ID =2A Schematic diagram R ... See More ⇒

9.1. Size:1933K goford
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GOFORD G2002 D Description The G2002 uses advanced trench technology and G design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features S Schematic diagram VDSS RDS(ON) ID @ 10V (typ) 520m 200V 2A High density cell design for ultra low Rdson Fully characterized avalanche voltage and curr... See More ⇒

Detailed specifications: SPP80N06S2L-09, SPB80N06S2L-09, SPP80N06S2L-H5, SPB80N06S2L-H5, SPP100N06S2L-05, SPB100N06S2L-05, G1003, G1818, IRF1010E, GKI03026, GKI03039, GKI03061, GKI03080, GKI04031, GKI04048, GKI04076, GKI04101