All MOSFET. GP1M008A050XG Datasheet

 

GP1M008A050XG MOSFET. Datasheet pdf. Equivalent


   Type Designator: GP1M008A050XG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 132 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-252 TO-251

 GP1M008A050XG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GP1M008A050XG Datasheet (PDF)

 ..1. Size:502K  globalpower
 gp1m008a050xg.pdf

GP1M008A050XG GP1M008A050XG

GP1M008A050CG GP1M008A050PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 8A

 2.1. Size:384K  globalpower
 gp1m008a050xx.pdf

GP1M008A050XG GP1M008A050XG

GP1M008A050HGGP1M008A050FGN-channel MOSFETFeatures Low gate chargeBVDSS ID RDS(on) 100% avalanche tested500V 8A

 5.1. Size:1382K  globalpower
 gp1m008a080xx.pdf

GP1M008A050XG GP1M008A050XG

GP1M008A080HGP1M008A080FHN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge 100% avalanche tested800V 8A

 5.2. Size:381K  globalpower
 gp1m008a025xx.pdf

GP1M008A050XG GP1M008A050XG

GP1M008A025HGGP1M008A025FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on)MAX 100% avalanche tested250V 8A

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PMXB65UPE | BUK452-100A | FIR12N70FG | BRCS020N04BD

 

 
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