GP1M008A050XG Specs and Replacement
Type Designator: GP1M008A050XG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 132 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO-252 TO-251
GP1M008A050XG substitution
GP1M008A050XG datasheet
gp1m008a050xg.pdf
GP1M008A050CG GP1M008A050PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 8A ... See More ⇒
gp1m008a050xx.pdf
GP1M008A050HG GP1M008A050FG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 8A ... See More ⇒
gp1m008a080xx.pdf
GP1M008A080H GP1M008A080FH N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 800V 8A ... See More ⇒
gp1m008a025xx.pdf
GP1M008A025HG GP1M008A025FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 250V 8A ... See More ⇒
Detailed specifications: GP1M005A050XX , GP1M005A050XXX , GP1M006A065XH , GP1M006A065XX , GP1M006A070XX , GP1M007A065XX , GP1M007A090XX , GP1M008A025XX , IRFP064N , GP1M008A050XX , GP1M008A080XX , GP1M009A020XG , GP1M009A020XX , GP1M009A050XXX , GP1M009A060XX , GP1M009A070X , GP1M009A090N .
Keywords - GP1M008A050XG MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
