All MOSFET. GP1M008A050XG Datasheet

 

GP1M008A050XG MOSFET. Datasheet pdf. Equivalent

Type Designator: GP1M008A050XG

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 21 nC

Rise Time (tr): 33 nS

Drain-Source Capacitance (Cd): 132 pF

Maximum Drain-Source On-State Resistance (Rds): 0.85 Ohm

Package: TO-252, TO-251

GP1M008A050XG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GP1M008A050XG Datasheet (PDF)

0.1. gp1m008a050xg.pdf Size:502K _globalpower

GP1M008A050XG
GP1M008A050XG

GP1M008A050CG GP1M008A050PG N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 500V 8A <0.85W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK I-PAK Device Package Marking Remark GP1M008A050CG D-PAK GP1M008A050CG RoHS GP1M008A050PG I-PAK GP1M008A050PG RoHS Absolute Maxi

2.1. gp1m008a050xx.pdf Size:384K _globalpower

GP1M008A050XG
GP1M008A050XG

GP1M008A050HG GP1M008A050FG N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 500V 8A <0.85  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification Device Package Marking Remark GP1M008A050HG TO-220 GP1M008A050HG RoHS GP1M008A050FG TO-220F GP1M008A050FG RoHS Absolute Maximum Ratings GP1M008A050

 5.1. gp1m008a080xx.pdf Size:1382K _globalpower

GP1M008A050XG
GP1M008A050XG

GP1M008A080H GP1M008A080FH N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge  100% avalanche tested 800V 8A < 1.4  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification Device Package Marking Remark GP1M008A080H TO-220 GP1M008A080H RoHS GP1M008A080FH TO-220F GP1M008A080FH Halogen Free Absolute Maximum Ratings Parame

5.2. gp1m008a025xx.pdf Size:381K _globalpower

GP1M008A050XG
GP1M008A050XG

GP1M008A025HG GP1M008A025FG Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)MAX  100% avalanche tested 250V 8A <0.6  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification Device Package Marking Remark GP1M008A025HG TO-220 GP1M008A025HG RoHS GP1M008A025FG TO-220F GP1M008A025FG RoHS Absolute Maximum Ratings GP1M008A0

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top