All MOSFET. GP1M008A050XG Datasheet

 

GP1M008A050XG Datasheet and Replacement


   Type Designator: GP1M008A050XG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 132 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-252 TO-251
      - MOSFET Cross-Reference Search

 

GP1M008A050XG Datasheet (PDF)

 ..1. Size:502K  globalpower
 gp1m008a050xg.pdf pdf_icon

GP1M008A050XG

GP1M008A050CG GP1M008A050PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 8A

 2.1. Size:384K  globalpower
 gp1m008a050xx.pdf pdf_icon

GP1M008A050XG

GP1M008A050HGGP1M008A050FGN-channel MOSFETFeatures Low gate chargeBVDSS ID RDS(on) 100% avalanche tested500V 8A

 5.1. Size:1382K  globalpower
 gp1m008a080xx.pdf pdf_icon

GP1M008A050XG

GP1M008A080HGP1M008A080FHN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge 100% avalanche tested800V 8A

 5.2. Size:381K  globalpower
 gp1m008a025xx.pdf pdf_icon

GP1M008A050XG

GP1M008A025HGGP1M008A025FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on)MAX 100% avalanche tested250V 8A

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SVT068R5NT | LKK47-06C5 | TSM4424CS | BRA4N60 | DM8N65C | IRFB3004GPBF | BRCS200P03DP

Keywords - GP1M008A050XG MOSFET datasheet

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