All MOSFET. GP1M009A020XG Datasheet

 

GP1M009A020XG Datasheet and Replacement


   Type Designator: GP1M009A020XG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 86 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-252 TO-251
 

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GP1M009A020XG Datasheet (PDF)

 ..1. Size:503K  globalpower
 gp1m009a020xg.pdf pdf_icon

GP1M009A020XG

GP1M009A020CG GP1M009A020PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 9A

 2.1. Size:405K  globalpower
 gp1m009a020xx.pdf pdf_icon

GP1M009A020XG

GP1M009A020HGGP1M009A020FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on)MAX 100% avalanche tested200V 9A

 5.1. Size:390K  globalpower
 gp1m009a090xx.pdf pdf_icon

GP1M009A020XG

GP1M009A090HGP1M009A090FHVDSS = 990 V @TjmaxFeaturesID = 9A Low gate chargeRDS(ON) = 1.4 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification DGSDevice Package Marking RemarkGP1M009A090H TO-220 GP1M009A090H RoHSGP1M009A090FH TO-220F GP1M009A090FH Halogen FreeAbsolute M

 5.2. Size:539K  globalpower
 gp1m009a090n.pdf pdf_icon

GP1M009A020XG

GP1M009A090N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 900V 9.5A

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Datasheet: GP1M006A065XX , GP1M006A070XX , GP1M007A065XX , GP1M007A090XX , GP1M008A025XX , GP1M008A050XG , GP1M008A050XX , GP1M008A080XX , IRFZ44N , GP1M009A020XX , GP1M009A050XXX , GP1M009A060XX , GP1M009A070X , GP1M009A090N , GP1M009A090XX , GP1M010A060XX , GP1M010A080N .

History: AP4543GEH-HF | PDN2309S | AOE6932 | TSM75N75CZ | NCE60N1K0I

Keywords - GP1M009A020XG MOSFET datasheet

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