GP1M010A060XX PDF and Equivalents Search

 

GP1M010A060XX Specs and Replacement

Type Designator: GP1M010A060XX

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 198 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 160 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO-220 TO-220F

GP1M010A060XX substitution

- MOSFET ⓘ Cross-Reference Search

 

GP1M010A060XX datasheet

 ..1. Size:387K  globalpower
 gp1m010a060xx.pdf pdf_icon

GP1M010A060XX

GP1M010A060H GP1M010A060FH VDSS = 660 V @Tjmax Features ID = 10A Low gate charge RDS(on) = 0.75 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark GP1M010A060H TO-220 GP1M010A060H RoHS GP1M010A060FH TO-220F GP1M010A060FH Halogen Free Absolute ... See More ⇒

 5.1. Size:550K  globalpower
 gp1m010a080n.pdf pdf_icon

GP1M010A060XX

GP1M010A080N VDSS = 880 V @Tjmax Features ID = 10A Low gate charge RDS(on) = 1.05 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D G S Device Package Marking Remark GP1M010A080N TO-3P GP1M010A080N RoHS Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDS 900 V ... See More ⇒

 5.2. Size:408K  globalpower
 gp1m010a080xx.pdf pdf_icon

GP1M010A060XX

GP1M010A080H GP1M010A080FH VDSS = 880 V @Tjmax Features ID = 9.5A Low gate charge RDS(ON) = 1.05 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark GP1M010A080H TO-220 GP1M010A080H RoHS GP1M010A080FH TO-220F GP1M010A080FH Halogen Free Absolut... See More ⇒

 8.1. Size:389K  globalpower
 gp1m013a050xx.pdf pdf_icon

GP1M010A060XX

GP1M013A050H GP1M013A050FH VDSS = 550 V @Tjmax Features ID = 13A Low gate charge RDS(on) = 0.48 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark GP1M013A050H TO-220 GP1M013A050H RoHS GP1M013A050FH TO-220F GP1M013A050FH Halogen Free Absolute ... See More ⇒

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Detailed specifications: GP1M008A080XX , GP1M009A020XG , GP1M009A020XX , GP1M009A050XXX , GP1M009A060XX , GP1M009A070X , GP1M009A090N , GP1M009A090XX , 50N06 , GP1M010A080N , GP1M010A080XX , GP1M011A050XX , GP1M011A050XXX , GP1M012A060XX , GP1M013A050XX , GP1M015A050XX , GP1M016A025XG .

Keywords - GP1M010A060XX MOSFET specs

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