GP1M016A025XG Datasheet. Specs and Replacement

Type Designator: GP1M016A025XG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 93.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 51 nS

Cossⓘ - Output Capacitance: 152 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm

Package: TO-252 TO-251

GP1M016A025XG substitution

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GP1M016A025XG datasheet

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GP1M016A025XG

GP1M016A025CG GP1M016A025PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 250V 16A ... See More ⇒

 2.1. Size:391K  globalpower
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GP1M016A025XG

GP1M016A025HG GP1M016A025FG N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 250V 16A ... See More ⇒

 5.1. Size:563K  globalpower
 gp1m016a060n.pdf pdf_icon

GP1M016A025XG

GP1M016A060N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 16A ... See More ⇒

 5.2. Size:391K  globalpower
 gp1m016a060xx.pdf pdf_icon

GP1M016A025XG

GP1M016A060H GP1M016A060F(H) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 16A ... See More ⇒

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Detailed specifications: GP1M010A060XX, GP1M010A080N, GP1M010A080XX, GP1M011A050XX, GP1M011A050XXX, GP1M012A060XX, GP1M013A050XX, GP1M015A050XX, IRFP260N, GP1M016A025XX, GP1M016A060N, GP1M016A060XX, GP1M018A020XG, GP1M018A020XX, GP1M020A050N, GP1M020A060M, GP1M020A060N

Keywords - GP1M016A025XG MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.