All MOSFET. GP1M016A060N Datasheet

 

GP1M016A060N Datasheet and Replacement


   Type Designator: GP1M016A060N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 61 nS
   Cossⓘ - Output Capacitance: 256 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
   Package: TO-3PN
 

 GP1M016A060N substitution

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GP1M016A060N Datasheet (PDF)

 ..1. Size:563K  globalpower
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GP1M016A060N

GP1M016A060N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 16A

 3.1. Size:391K  globalpower
 gp1m016a060xx.pdf pdf_icon

GP1M016A060N

GP1M016A060HGP1M016A060F(H)N-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge600V 16A

 5.1. Size:391K  globalpower
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GP1M016A060N

GP1M016A025HGGP1M016A025FGN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge250V 16A

 5.2. Size:521K  globalpower
 gp1m016a025xg.pdf pdf_icon

GP1M016A060N

GP1M016A025CG GP1M016A025PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 250V 16A

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Datasheet: GP1M010A080XX , GP1M011A050XX , GP1M011A050XXX , GP1M012A060XX , GP1M013A050XX , GP1M015A050XX , GP1M016A025XG , GP1M016A025XX , AON6414A , GP1M016A060XX , GP1M018A020XG , GP1M018A020XX , GP1M020A050N , GP1M020A060M , GP1M020A060N , GP1M023A050N , GP1T025A120B .

History: PMPB20XPEA | MMFT2406T1 | TPP65R750C | SLU80R500SJ | ELM14604AA | SQ4410EY | LND06R062

Keywords - GP1M016A060N MOSFET datasheet

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