GP1M016A060N Datasheet. Specs and Replacement

Type Designator: GP1M016A060N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 312 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 61 nS

Cossⓘ - Output Capacitance: 256 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm

Package: TO-3PN

GP1M016A060N substitution

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GP1M016A060N datasheet

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GP1M016A060N

GP1M016A060N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 16A ... See More ⇒

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GP1M016A060N

GP1M016A060H GP1M016A060F(H) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 16A ... See More ⇒

 5.1. Size:391K  globalpower
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GP1M016A060N

GP1M016A025HG GP1M016A025FG N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 250V 16A ... See More ⇒

 5.2. Size:521K  globalpower
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GP1M016A060N

GP1M016A025CG GP1M016A025PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 250V 16A ... See More ⇒

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Detailed specifications: GP1M010A080XX, GP1M011A050XX, GP1M011A050XXX, GP1M012A060XX, GP1M013A050XX, GP1M015A050XX, GP1M016A025XG, GP1M016A025XX, IRFB4227, GP1M016A060XX, GP1M018A020XG, GP1M018A020XX, GP1M020A050N, GP1M020A060M, GP1M020A060N, GP1M023A050N, GP1T025A120B

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