All MOSFET. GP1M020A050N Datasheet

 

GP1M020A050N Datasheet and Replacement


   Type Designator: GP1M020A050N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 72 nS
   Cossⓘ - Output Capacitance: 296 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-3PN
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GP1M020A050N Datasheet (PDF)

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GP1M020A050N

GP1M020A050N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 20A

 5.1. Size:758K  globalpower
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GP1M020A050N

GP1M020A060N N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 20A

 5.2. Size:688K  globalpower
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GP1M020A050N

GP1M020A060M VDSS = 660 V @Tjmax Features ID = 20A Low gate charge RDS(on) = 0.33 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification TO-3P D G S Device Package Marking Remark GP1M020A060M TO-3P GP1M020A060M RoHS Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDS

 8.1. Size:578K  globalpower
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GP1M020A050N

GP1M023A050N N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 500V 23A

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