GP1M020A050N MOSFET. Datasheet pdf. Equivalent
Type Designator: GP1M020A050N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 312 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 54 nC
trⓘ - Rise Time: 72 nS
Cossⓘ - Output Capacitance: 296 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO-3PN
GP1M020A050N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GP1M020A050N Datasheet (PDF)
gp1m020a050n.pdf
GP1M020A050N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 20A
gp1m020a060n.pdf
GP1M020A060N N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 20A
gp1m020a060m.pdf
GP1M020A060M VDSS = 660 V @Tjmax Features ID = 20A Low gate charge RDS(on) = 0.33 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification TO-3P D G S Device Package Marking Remark GP1M020A060M TO-3P GP1M020A060M RoHS Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDS
gp1m023a050n.pdf
GP1M023A050N N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 500V 23A
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
