GP1T160A120B Datasheet. Specs and Replacement

Type Designator: GP1T160A120B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 114 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 94 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO-247

GP1T160A120B substitution

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GP1T160A120B datasheet

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GP1T160A120B

PRELIMINARY GP1T160A120B VDS 1200 V RDS,on 160 mW ID 16 A 1200V SiC MOSFET TM TM TM Amp+ Features Amp+ Benefits Amp+ Applications Low on-resistance High system efficiency Motor drives High speed switching with low capacitance Higher system switching frequency Switch mode power supplies Fast reverse recovery Smaller cooing system Solar inverte... See More ⇒

Detailed specifications: GP1M020A060M, GP1M020A060N, GP1M023A050N, GP1T025A120B, GP1T036A060B, GP1T040A120B, GP1T072A060B, GP1T080A120B, 2SK3878, GP2M002A060XG, GP2M002A060XX, GP2M002A065XG, GP2M002A065XX, GP2M004A060XG, GP2M004A060XX, GP2M004A065XG, GP2M004A065XX

Keywords - GP1T160A120B MOSFET specs

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