All MOSFET. GP1T160A120B Datasheet

 

GP1T160A120B Datasheet and Replacement


   Type Designator: GP1T160A120B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 114 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 94 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO-247
 

 GP1T160A120B substitution

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GP1T160A120B Datasheet (PDF)

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GP1T160A120B

PRELIMINARYGP1T160A120BVDS 1200 VRDS,on 160mWID 16 A1200V SiC MOSFETTM TM TMAmp+ Features Amp+ Benefits Amp+ Applications Low on-resistance High system efficiency Motor drives High speed switching with low capacitance Higher system switching frequency Switch mode power supplies Fast reverse recovery Smaller cooing system Solar inverte

Datasheet: GP1M020A060M , GP1M020A060N , GP1M023A050N , GP1T025A120B , GP1T036A060B , GP1T040A120B , GP1T072A060B , GP1T080A120B , IRFP260 , GP2M002A060XG , GP2M002A060XX , GP2M002A065XG , GP2M002A065XX , GP2M004A060XG , GP2M004A060XX , GP2M004A065XG , GP2M004A065XX .

History: SI4622DY | VBZL80N03

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