GP2M002A060XG Datasheet and Replacement
Type Designator: GP2M002A060XG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 52.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 41 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: TO-220 TO-220F
GP2M002A060XG substitution
GP2M002A060XG Datasheet (PDF)
gp2m002a060xg.pdf
GP2M002A060HGGP2M002A060FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested600V 2.0A
gp2m002a060xx.pdf
GP2M002A060CG GP2M002A060PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A
gp2m002a065xx.pdf
GP2M002A065HGGP2M002A065FGFeatures N-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested650V 1.8A
gp2m002a065xg.pdf
GP2M002A065CG GP2M002A065PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A
Datasheet: GP1M020A060N , GP1M023A050N , GP1T025A120B , GP1T036A060B , GP1T040A120B , GP1T072A060B , GP1T080A120B , GP1T160A120B , 12N60 , GP2M002A060XX , GP2M002A065XG , GP2M002A065XX , GP2M004A060XG , GP2M004A060XX , GP2M004A065XG , GP2M004A065XX , GP2M005A050XG .
History: BL4N80-P | IPG20N06S4-15
Keywords - GP2M002A060XG MOSFET datasheet
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History: BL4N80-P | IPG20N06S4-15
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