All MOSFET. GP2M002A060XG Datasheet

 

GP2M002A060XG Datasheet and Replacement


   Type Designator: GP2M002A060XG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 41 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: TO-220 TO-220F
 

 GP2M002A060XG substitution

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GP2M002A060XG Datasheet (PDF)

 ..1. Size:405K  globalpower
 gp2m002a060xg.pdf pdf_icon

GP2M002A060XG

GP2M002A060HGGP2M002A060FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested600V 2.0A

 2.1. Size:505K  globalpower
 gp2m002a060xx.pdf pdf_icon

GP2M002A060XG

GP2M002A060CG GP2M002A060PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A

 4.1. Size:394K  globalpower
 gp2m002a065xx.pdf pdf_icon

GP2M002A060XG

GP2M002A065HGGP2M002A065FGFeatures N-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested650V 1.8A

 4.2. Size:499K  globalpower
 gp2m002a065xg.pdf pdf_icon

GP2M002A060XG

GP2M002A065CG GP2M002A065PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A

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Datasheet: GP1M020A060N , GP1M023A050N , GP1T025A120B , GP1T036A060B , GP1T040A120B , GP1T072A060B , GP1T080A120B , GP1T160A120B , STP75NF75 , GP2M002A060XX , GP2M002A065XG , GP2M002A065XX , GP2M004A060XG , GP2M004A060XX , GP2M004A065XG , GP2M004A065XX , GP2M005A050XG .

History: IRFHM8326 | GP1T160A120B

Keywords - GP2M002A060XG MOSFET datasheet

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 GP2M002A060XG equivalent finder
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