All MOSFET. GP2M004A065XG Datasheet

 

GP2M004A065XG Datasheet and Replacement


   Type Designator: GP2M004A065XG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 98.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 67 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO-252 TO-251
 

 GP2M004A065XG substitution

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GP2M004A065XG Datasheet (PDF)

 ..1. Size:503K  globalpower
 gp2m004a065xg.pdf pdf_icon

GP2M004A065XG

GP2M004A065CG GP2M004A065PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A

 2.1. Size:395K  globalpower
 gp2m004a065xx.pdf pdf_icon

GP2M004A065XG

GP2M004A065HGGP2M004A065FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested650V 4.0A

 4.1. Size:419K  globalpower
 gp2m004a060xx.pdf pdf_icon

GP2M004A065XG

GP2M004A060HGGP2M004A060FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested600V 4.0A

 4.2. Size:514K  globalpower
 gp2m004a060xg.pdf pdf_icon

GP2M004A065XG

GP2M004A060CG GP2M004A060PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A

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Datasheet: GP1T080A120B , GP1T160A120B , GP2M002A060XG , GP2M002A060XX , GP2M002A065XG , GP2M002A065XX , GP2M004A060XG , GP2M004A060XX , SPP20N60C3 , GP2M004A065XX , GP2M005A050XG , GP2M005A050XX , GP2M005A060XG , GP2M005A060XXX , GP2M007A065XG , GP2M007A080F , GP2M008A060XGX .

History: AP8N3R5CMT | UTT18P06

Keywords - GP2M004A065XG MOSFET datasheet

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