All MOSFET. GP2M005A060XXX Datasheet

 

GP2M005A060XXX Datasheet and Replacement


   Type Designator: GP2M005A060XXX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 98.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
   Package: TO-252 TO-251
 

 GP2M005A060XXX substitution

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GP2M005A060XXX Datasheet (PDF)

 ..1. Size:507K  globalpower
 gp2m005a060xxx.pdf pdf_icon

GP2M005A060XXX

GP2M005A060CG GP2M005A060PG(H) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A

 2.1. Size:410K  globalpower
 gp2m005a060xg.pdf pdf_icon

GP2M005A060XXX

GP2M005A060HGGP2M005A060FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested600V 4.2A

 5.1. Size:366K  globalpower
 gp2m005a050xx.pdf pdf_icon

GP2M005A060XXX

GP2M005A050HGGP2M005A050FGFeatures N-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested500V 4.5A

 5.2. Size:500K  globalpower
 gp2m005a050xg.pdf pdf_icon

GP2M005A060XXX

GP2M005A050CG GP2M005A050PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A

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Datasheet: GP2M002A065XX , GP2M004A060XG , GP2M004A060XX , GP2M004A065XG , GP2M004A065XX , GP2M005A050XG , GP2M005A050XX , GP2M005A060XG , IRFB3607 , GP2M007A065XG , GP2M007A080F , GP2M008A060XGX , GP2M008A060XXX , GP2M009A090FG , GP2M009A090NG , GP2M010A060X , GP2M010A065X .

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