GP2M005A060XXX Datasheet and Replacement
Type Designator: GP2M005A060XXX
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 98.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 72 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
Package: TO-252 TO-251
GP2M005A060XXX substitution
GP2M005A060XXX Datasheet (PDF)
gp2m005a060xxx.pdf
GP2M005A060CG GP2M005A060PG(H) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A
gp2m005a060xg.pdf
GP2M005A060HGGP2M005A060FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested600V 4.2A
gp2m005a050xx.pdf
GP2M005A050HGGP2M005A050FGFeatures N-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested500V 4.5A
gp2m005a050xg.pdf
GP2M005A050CG GP2M005A050PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A
Datasheet: GP2M002A065XX , GP2M004A060XG , GP2M004A060XX , GP2M004A065XG , GP2M004A065XX , GP2M005A050XG , GP2M005A050XX , GP2M005A060XG , IRFB3607 , GP2M007A065XG , GP2M007A080F , GP2M008A060XGX , GP2M008A060XXX , GP2M009A090FG , GP2M009A090NG , GP2M010A060X , GP2M010A065X .
History: IXTY1R4N60P | IRFSL7430PBF
Keywords - GP2M005A060XXX MOSFET datasheet
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History: IXTY1R4N60P | IRFSL7430PBF
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