GP2M007A065XG Datasheet. Specs and Replacement

Type Designator: GP2M007A065XG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 103 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO-220 TO-220F

GP2M007A065XG substitution

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GP2M007A065XG datasheet

 ..1. Size:416K  globalpower
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GP2M007A065XG

GP2M007A065HG GP2M007A065FG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A ... See More ⇒

 5.1. Size:242K  globalpower
gp2m007a080f.pdf pdf_icon

GP2M007A065XG

GP2M007A080F N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge Improved dv/dt capability 800V 7A ... See More ⇒

 8.1. Size:366K  globalpower
gp2m005a050xx.pdf pdf_icon

GP2M007A065XG

GP2M005A050HG GP2M005A050FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A ... See More ⇒

 8.2. Size:410K  globalpower
gp2m005a060xg.pdf pdf_icon

GP2M007A065XG

GP2M005A060HG GP2M005A060FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A ... See More ⇒

Detailed specifications: GP2M004A060XG, GP2M004A060XX, GP2M004A065XG, GP2M004A065XX, GP2M005A050XG, GP2M005A050XX, GP2M005A060XG, GP2M005A060XXX, 13N50, GP2M007A080F, GP2M008A060XGX, GP2M008A060XXX, GP2M009A090FG, GP2M009A090NG, GP2M010A060X, GP2M010A065X, GP2M011A090NG

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.