GP2M007A065XG Datasheet and Replacement
Type Designator: GP2M007A065XG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 103 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-220 TO-220F
GP2M007A065XG substitution
GP2M007A065XG Datasheet (PDF)
gp2m007a065xg.pdf
GP2M007A065HGGP2M007A065FGN-channel MOSFETFeatures Low gate chargeBVDSS ID RDS(on) 100% avalanche tested650V 6.5A
gp2m007a080f.pdf
GP2M007A080FN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge Improved dv/dt capability800V 7A
gp2m005a050xx.pdf
GP2M005A050HGGP2M005A050FGFeatures N-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested500V 4.5A
gp2m005a060xg.pdf
GP2M005A060HGGP2M005A060FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested600V 4.2A
Datasheet: GP2M004A060XG , GP2M004A060XX , GP2M004A065XG , GP2M004A065XX , GP2M005A050XG , GP2M005A050XX , GP2M005A060XG , GP2M005A060XXX , TK10A60D , GP2M007A080F , GP2M008A060XGX , GP2M008A060XXX , GP2M009A090FG , GP2M009A090NG , GP2M010A060X , GP2M010A065X , GP2M011A090NG .
History: STP4NK50ZFP | IXTV230N085TS | SPP15N60C3 | F12W50VX2 | VBE1410 | FQB19N10TM | PA710ED
Keywords - GP2M007A065XG MOSFET datasheet
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History: STP4NK50ZFP | IXTV230N085TS | SPP15N60C3 | F12W50VX2 | VBE1410 | FQB19N10TM | PA710ED
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