GP2M007A065XG datasheet, аналоги, основные параметры
Наименование производителя: GP2M007A065XG
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 120 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 46 ns
Cossⓘ - Выходная емкость: 103 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
Тип корпуса: TO-220
TO-220F
Аналог (замена) для GP2M007A065XG
- подборⓘ MOSFET транзистора по параметрам
GP2M007A065XG даташит
..1. Size:416K globalpower
gp2m007a065xg.pdf 
GP2M007A065HG GP2M007A065FG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A
5.1. Size:242K globalpower
gp2m007a080f.pdf 
GP2M007A080F N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge Improved dv/dt capability 800V 7A
8.1. Size:366K globalpower
gp2m005a050xx.pdf 
GP2M005A050HG GP2M005A050FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A
8.2. Size:410K globalpower
gp2m005a060xg.pdf 
GP2M005A060HG GP2M005A060FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A
8.3. Size:419K globalpower
gp2m004a060xx.pdf 
GP2M004A060HG GP2M004A060FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A
8.4. Size:505K globalpower
gp2m002a060xx.pdf 
GP2M002A060CG GP2M002A060PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A
8.5. Size:395K globalpower
gp2m004a065xx.pdf 
GP2M004A065HG GP2M004A065FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A
8.6. Size:562K globalpower
gp2m009a090ng.pdf 
GP2M009A090NG N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 9A
8.7. Size:514K globalpower
gp2m004a060xg.pdf 
GP2M004A060CG GP2M004A060PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A
8.8. Size:522K globalpower
gp2m008a060xxx.pdf 
GP2M008A060CG GP2M008A060PG(H) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A
8.9. Size:394K globalpower
gp2m002a065xx.pdf 
GP2M002A065HG GP2M002A065FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A
8.10. Size:499K globalpower
gp2m002a065xg.pdf 
GP2M002A065CG GP2M002A065PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A
8.11. Size:500K globalpower
gp2m005a050xg.pdf 
GP2M005A050CG GP2M005A050PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A
8.12. Size:240K globalpower
gp2m009a090fg.pdf 
GP2M009A090FG N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge Improved dv/dt capability 900V 9A
8.13. Size:503K globalpower
gp2m004a065xg.pdf 
GP2M004A065CG GP2M004A065PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A
8.14. Size:507K globalpower
gp2m005a060xxx.pdf 
GP2M005A060CG GP2M005A060PG(H) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A
8.15. Size:405K globalpower
gp2m002a060xg.pdf 
GP2M002A060HG GP2M002A060FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A
8.16. Size:398K globalpower
gp2m008a060xgx.pdf 
GP2M008A060HG GP2M008A060FG(H) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A
Другие IGBT... GP2M004A060XG, GP2M004A060XX, GP2M004A065XG, GP2M004A065XX, GP2M005A050XG, GP2M005A050XX, GP2M005A060XG, GP2M005A060XXX, 13N50, GP2M007A080F, GP2M008A060XGX, GP2M008A060XXX, GP2M009A090FG, GP2M009A090NG, GP2M010A060X, GP2M010A065X, GP2M011A090NG
