GP2M007A065XG
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: GP2M007A065XG
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 120
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 6.5
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 46
ns
Cossⓘ - Выходная емкость: 103
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.4
Ohm
Тип корпуса:
TO-220
TO-220F
Аналог (замена) для GP2M007A065XG
-
подбор ⓘ MOSFET транзистора по параметрам
GP2M007A065XG
Datasheet (PDF)
..1. Size:416K globalpower
gp2m007a065xg.pdf 
GP2M007A065HGGP2M007A065FGN-channel MOSFETFeatures Low gate chargeBVDSS ID RDS(on) 100% avalanche tested650V 6.5A
5.1. Size:242K globalpower
gp2m007a080f.pdf 
GP2M007A080FN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge Improved dv/dt capability800V 7A
8.1. Size:366K globalpower
gp2m005a050xx.pdf 
GP2M005A050HGGP2M005A050FGFeatures N-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested500V 4.5A
8.2. Size:410K globalpower
gp2m005a060xg.pdf 
GP2M005A060HGGP2M005A060FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested600V 4.2A
8.3. Size:419K globalpower
gp2m004a060xx.pdf 
GP2M004A060HGGP2M004A060FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested600V 4.0A
8.4. Size:505K globalpower
gp2m002a060xx.pdf 
GP2M002A060CG GP2M002A060PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A
8.5. Size:395K globalpower
gp2m004a065xx.pdf 
GP2M004A065HGGP2M004A065FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested650V 4.0A
8.6. Size:562K globalpower
gp2m009a090ng.pdf 
GP2M009A090NG N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 9A
8.7. Size:514K globalpower
gp2m004a060xg.pdf 
GP2M004A060CG GP2M004A060PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A
8.8. Size:522K globalpower
gp2m008a060xxx.pdf 
GP2M008A060CG GP2M008A060PG(H) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A
8.9. Size:394K globalpower
gp2m002a065xx.pdf 
GP2M002A065HGGP2M002A065FGFeatures N-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested650V 1.8A
8.10. Size:499K globalpower
gp2m002a065xg.pdf 
GP2M002A065CG GP2M002A065PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A
8.11. Size:500K globalpower
gp2m005a050xg.pdf 
GP2M005A050CG GP2M005A050PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A
8.12. Size:240K globalpower
gp2m009a090fg.pdf 
GP2M009A090FGN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge Improved dv/dt capability 900V 9A
8.13. Size:503K globalpower
gp2m004a065xg.pdf 
GP2M004A065CG GP2M004A065PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A
8.14. Size:507K globalpower
gp2m005a060xxx.pdf 
GP2M005A060CG GP2M005A060PG(H) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A
8.15. Size:405K globalpower
gp2m002a060xg.pdf 
GP2M002A060HGGP2M002A060FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested600V 2.0A
8.16. Size:398K globalpower
gp2m008a060xgx.pdf 
GP2M008A060HGGP2M008A060FG(H)FeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested600V 7.5A
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.
History: P7006BL
| FHD4N65E
| NTMFS5C456NL
