GP2M009A090NG Datasheet. Specs and Replacement

Type Designator: GP2M009A090NG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 312 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 97 nS

Cossⓘ - Output Capacitance: 192 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO-3PN

GP2M009A090NG substitution

- MOSFET ⓘ Cross-Reference Search

 

GP2M009A090NG datasheet

 ..1. Size:562K  globalpower
 gp2m009a090ng.pdf pdf_icon

GP2M009A090NG

GP2M009A090NG N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 9A ... See More ⇒

 3.1. Size:240K  globalpower
 gp2m009a090fg.pdf pdf_icon

GP2M009A090NG

GP2M009A090FG N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge Improved dv/dt capability 900V 9A ... See More ⇒

 8.1. Size:416K  globalpower
 gp2m007a065xg.pdf pdf_icon

GP2M009A090NG

GP2M007A065HG GP2M007A065FG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A ... See More ⇒

 8.2. Size:366K  globalpower
 gp2m005a050xx.pdf pdf_icon

GP2M009A090NG

GP2M005A050HG GP2M005A050FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A ... See More ⇒

SHOW MORE

Detailed specifications: GP2M005A050XX, GP2M005A060XG, GP2M005A060XXX, GP2M007A065XG, GP2M007A080F, GP2M008A060XGX, GP2M008A060XXX, GP2M009A090FG, IRFB3607, GP2M010A060X, GP2M010A065X, GP2M011A090NG, GP2M012A060X, GP2M012A080NG, GP2M013A050F, GP2M020A050N, GP2M020A050X

Keywords - GP2M009A090NG MOSFET specs

 GP2M009A090NG cross reference

 GP2M009A090NG equivalent finder

 GP2M009A090NG pdf lookup

 GP2M009A090NG substitution

 GP2M009A090NG replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.