GP2M009A090NG Datasheet and Replacement
Type Designator: GP2M009A090NG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 312 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 97 nS
Cossⓘ - Output Capacitance: 192 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-3PN
GP2M009A090NG substitution
GP2M009A090NG Datasheet (PDF)
gp2m009a090ng.pdf
GP2M009A090NG N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 9A
gp2m009a090fg.pdf
GP2M009A090FGN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge Improved dv/dt capability 900V 9A
gp2m007a065xg.pdf
GP2M007A065HGGP2M007A065FGN-channel MOSFETFeatures Low gate chargeBVDSS ID RDS(on) 100% avalanche tested650V 6.5A
gp2m005a050xx.pdf
GP2M005A050HGGP2M005A050FGFeatures N-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested500V 4.5A
Datasheet: GP2M005A050XX , GP2M005A060XG , GP2M005A060XXX , GP2M007A065XG , GP2M007A080F , GP2M008A060XGX , GP2M008A060XXX , GP2M009A090FG , AON7506 , GP2M010A060X , GP2M010A065X , GP2M011A090NG , GP2M012A060X , GP2M012A080NG , GP2M013A050F , GP2M020A050N , GP2M020A050X .
History: UTT60N06 | IRFS644B | SE60120GTS | HSW6811 | AON6912A | AUIRFB3004 | CS6N70A3D-G
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History: UTT60N06 | IRFS644B | SE60120GTS | HSW6811 | AON6912A | AUIRFB3004 | CS6N70A3D-G
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