All MOSFET. GP2M011A090NG Datasheet

 

GP2M011A090NG Datasheet and Replacement


   Type Designator: GP2M011A090NG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 416 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 89 nS
   Cossⓘ - Output Capacitance: 297 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO-3PN
 

 GP2M011A090NG substitution

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GP2M011A090NG Datasheet (PDF)

 ..1. Size:574K  globalpower
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GP2M011A090NG

GP2M011A090NG N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 11A

 8.1. Size:406K  globalpower
 gp2m010a060x.pdf pdf_icon

GP2M011A090NG

GP2M010A060HGP2M010A060FN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge600V 10A

 8.2. Size:570K  globalpower
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GP2M011A090NG

GP2M012A080NG N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 800V 12A

 8.3. Size:242K  globalpower
 gp2m013a050f.pdf pdf_icon

GP2M011A090NG

GP2M013A050FN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge500V 13A

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Datasheet: GP2M007A065XG , GP2M007A080F , GP2M008A060XGX , GP2M008A060XXX , GP2M009A090FG , GP2M009A090NG , GP2M010A060X , GP2M010A065X , IRLB4132 , GP2M012A060X , GP2M012A080NG , GP2M013A050F , GP2M020A050N , GP2M020A050X , GP2M020A060N , GP2M023A050N , GSM1012 .

History: DACMH200N1200

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