All MOSFET. GP2M012A080NG Datasheet

 

GP2M012A080NG Datasheet and Replacement


   Type Designator: GP2M012A080NG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 416 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO-3PN
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GP2M012A080NG Datasheet (PDF)

 ..1. Size:570K  globalpower
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GP2M012A080NG

GP2M012A080NG N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 800V 12A

 5.1. Size:403K  globalpower
 gp2m012a060x.pdf pdf_icon

GP2M012A080NG

GP2M012A060HGP2M012A060FN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge600V 12A

 8.1. Size:406K  globalpower
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GP2M012A080NG

GP2M010A060HGP2M010A060FN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge600V 10A

 8.2. Size:242K  globalpower
 gp2m013a050f.pdf pdf_icon

GP2M012A080NG

GP2M013A050FN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge500V 13A

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History: AP60T03GJ | BUZ84 | IRLR024 | AON6794 | CEDM7002AE | CED05N8 | BL10N70-A

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