All MOSFET. GP2M013A050F Datasheet

 

GP2M013A050F Datasheet and Replacement


   Type Designator: GP2M013A050F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 61 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: TO-220F
 

 GP2M013A050F substitution

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GP2M013A050F Datasheet (PDF)

 ..1. Size:242K  globalpower
 gp2m013a050f.pdf pdf_icon

GP2M013A050F

GP2M013A050FN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge500V 13A

 8.1. Size:406K  globalpower
 gp2m010a060x.pdf pdf_icon

GP2M013A050F

GP2M010A060HGP2M010A060FN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge600V 10A

 8.2. Size:570K  globalpower
 gp2m012a080ng.pdf pdf_icon

GP2M013A050F

GP2M012A080NG N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 800V 12A

 8.3. Size:574K  globalpower
 gp2m011a090ng.pdf pdf_icon

GP2M013A050F

GP2M011A090NG N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 11A

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Datasheet: GP2M008A060XXX , GP2M009A090FG , GP2M009A090NG , GP2M010A060X , GP2M010A065X , GP2M011A090NG , GP2M012A060X , GP2M012A080NG , 20N50 , GP2M020A050N , GP2M020A050X , GP2M020A060N , GP2M023A050N , GSM1012 , GSM1012E , GSM1013 , GSM1013E .

History: BSZ440N10NS3G | TW1504ESG | AP9565AGJ-HF

Keywords - GP2M013A050F MOSFET datasheet

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