GP2M013A050F Datasheet. Specs and Replacement

Type Designator: GP2M013A050F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 61 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm

Package: TO-220F

GP2M013A050F substitution

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GP2M013A050F datasheet

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GP2M013A050F

GP2M013A050F N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 13A ... See More ⇒

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GP2M013A050F

GP2M010A060H GP2M010A060F N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 10A ... See More ⇒

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GP2M013A050F

GP2M012A080NG N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 800V 12A ... See More ⇒

 8.3. Size:574K  globalpower
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GP2M013A050F

GP2M011A090NG N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 11A ... See More ⇒

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Detailed specifications: GP2M008A060XXX, GP2M009A090FG, GP2M009A090NG, GP2M010A060X, GP2M010A065X, GP2M011A090NG, GP2M012A060X, GP2M012A080NG, STP80NF70, GP2M020A050N, GP2M020A050X, GP2M020A060N, GP2M023A050N, GSM1012, GSM1012E, GSM1013, GSM1013E

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