All MOSFET. GP2M020A050N Datasheet

 

GP2M020A050N Datasheet and Replacement


   Type Designator: GP2M020A050N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 61 nS
   Cossⓘ - Output Capacitance: 283 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-3PN
 

 GP2M020A050N substitution

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GP2M020A050N Datasheet (PDF)

 ..1. Size:573K  globalpower
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GP2M020A050N

GP2M020A050N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 500V 20A

 3.1. Size:415K  globalpower
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GP2M020A050N

GP2M020A050HGP2M020A050FN-channel MOSFETFeatures Low gate chargeBVDSS ID RDS(on) 100% avalanche tested500V 18A

 5.1. Size:574K  globalpower
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GP2M020A050N

GP2M020A60N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 20A

 8.1. Size:552K  globalpower
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GP2M020A050N

GP2M023A050N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 23A

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Datasheet: GP2M009A090FG , GP2M009A090NG , GP2M010A060X , GP2M010A065X , GP2M011A090NG , GP2M012A060X , GP2M012A080NG , GP2M013A050F , 20N50 , GP2M020A050X , GP2M020A060N , GP2M023A050N , GSM1012 , GSM1012E , GSM1013 , GSM1013E , GSM1016 .

History: AP6N3R1LH | NTD32N06L | VBZA9926 | CS4N100V | AP6N3R0LMT | HMS21N60 | DMT3008LFDF

Keywords - GP2M020A050N MOSFET datasheet

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