All MOSFET. GP2M020A050N Datasheet

 

GP2M020A050N Datasheet and Replacement


   Type Designator: GP2M020A050N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 61 nS
   Cossⓘ - Output Capacitance: 283 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-3PN
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GP2M020A050N Datasheet (PDF)

 ..1. Size:573K  globalpower
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GP2M020A050N

GP2M020A050N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 500V 20A

 3.1. Size:415K  globalpower
 gp2m020a050x.pdf pdf_icon

GP2M020A050N

GP2M020A050HGP2M020A050FN-channel MOSFETFeatures Low gate chargeBVDSS ID RDS(on) 100% avalanche tested500V 18A

 5.1. Size:574K  globalpower
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GP2M020A050N

GP2M020A60N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 20A

 8.1. Size:552K  globalpower
 gp2m023a050n.pdf pdf_icon

GP2M020A050N

GP2M023A050N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 23A

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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: RFF60P06 | SE12N65 | FQU13N10 | SFB053N100C3 | IRL530NLPBF | SWMI4N65D | SIR882ADP

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