GP2M020A050X Datasheet. Specs and Replacement

Type Designator: GP2M020A050X

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 290 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 61 nS

Cossⓘ - Output Capacitance: 283 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO-220 TO-220F

GP2M020A050X substitution

- MOSFET ⓘ Cross-Reference Search

 

GP2M020A050X datasheet

 ..1. Size:415K  globalpower
 gp2m020a050x.pdf pdf_icon

GP2M020A050X

GP2M020A050H GP2M020A050F N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 18A ... See More ⇒

 3.1. Size:573K  globalpower
 gp2m020a050n.pdf pdf_icon

GP2M020A050X

... See More ⇒

 5.1. Size:574K  globalpower
 gp2m020a060n.pdf pdf_icon

GP2M020A050X

GP2M020A60N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 20A ... See More ⇒

 8.1. Size:552K  globalpower
 gp2m023a050n.pdf pdf_icon

GP2M020A050X

GP2M023A050N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 23A ... See More ⇒

SHOW MORE

Detailed specifications: GP2M009A090NG, GP2M010A060X, GP2M010A065X, GP2M011A090NG, GP2M012A060X, GP2M012A080NG, GP2M013A050F, GP2M020A050N, TK10A60D, GP2M020A060N, GP2M023A050N, GSM1012, GSM1012E, GSM1013, GSM1013E, GSM1016, GSM1023

Keywords - GP2M020A050X MOSFET specs

 GP2M020A050X cross reference

 GP2M020A050X equivalent finder

 GP2M020A050X pdf lookup

 GP2M020A050X substitution

 GP2M020A050X replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.