GP2M020A050X Datasheet and Replacement
Type Designator: GP2M020A050X
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 290 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 61 nS
Cossⓘ - Output Capacitance: 283 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO-220 TO-220F
GP2M020A050X substitution
GP2M020A050X Datasheet (PDF)
gp2m020a050x.pdf

GP2M020A050HGP2M020A050FN-channel MOSFETFeatures Low gate chargeBVDSS ID RDS(on) 100% avalanche tested500V 18A
gp2m020a050n.pdf

GP2M020A050N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 500V 20A
gp2m020a060n.pdf

GP2M020A60N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 20A
gp2m023a050n.pdf

GP2M023A050N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 23A
Datasheet: GP2M009A090NG , GP2M010A060X , GP2M010A065X , GP2M011A090NG , GP2M012A060X , GP2M012A080NG , GP2M013A050F , GP2M020A050N , IRFZ24N , GP2M020A060N , GP2M023A050N , GSM1012 , GSM1012E , GSM1013 , GSM1013E , GSM1016 , GSM1023 .
History: STU309D
Keywords - GP2M020A050X MOSFET datasheet
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GP2M020A050X replacement
History: STU309D



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