All MOSFET. GP2M020A060N Datasheet

 

GP2M020A060N MOSFET. Datasheet pdf. Equivalent


   Type Designator: GP2M020A060N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 347 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 70 nC
   trⓘ - Rise Time: 87 nS
   Cossⓘ - Output Capacitance: 346 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm
   Package: TO-3PN

 GP2M020A060N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GP2M020A060N Datasheet (PDF)

 ..1. Size:574K  globalpower
 gp2m020a060n.pdf

GP2M020A060N GP2M020A060N

GP2M020A60N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 20A

 5.1. Size:415K  globalpower
 gp2m020a050x.pdf

GP2M020A060N GP2M020A060N

GP2M020A050HGP2M020A050FN-channel MOSFETFeatures Low gate chargeBVDSS ID RDS(on) 100% avalanche tested500V 18A

 5.2. Size:573K  globalpower
 gp2m020a050n.pdf

GP2M020A060N GP2M020A060N

GP2M020A050N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 500V 20A

 8.1. Size:552K  globalpower
 gp2m023a050n.pdf

GP2M020A060N GP2M020A060N

GP2M023A050N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 23A

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top