GP2M023A050N Datasheet. Specs and Replacement

Type Designator: GP2M023A050N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 347 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm

Package: TO-3PN

GP2M023A050N substitution

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GP2M023A050N datasheet

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GP2M023A050N

GP2M023A050N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 23A ... See More ⇒

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GP2M023A050N

GP2M020A60N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 20A ... See More ⇒

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GP2M023A050N

GP2M020A050H GP2M020A050F N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 18A ... See More ⇒

 8.3. Size:573K  globalpower
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GP2M023A050N

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Detailed specifications: GP2M010A065X, GP2M011A090NG, GP2M012A060X, GP2M012A080NG, GP2M013A050F, GP2M020A050N, GP2M020A050X, GP2M020A060N, BS170, GSM1012, GSM1012E, GSM1013, GSM1013E, GSM1016, GSM1023, GSM1024, GSM1024E

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