All MOSFET. GP2M023A050N Datasheet

 

GP2M023A050N Datasheet and Replacement


   Type Designator: GP2M023A050N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 347 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
   Package: TO-3PN
 

 GP2M023A050N substitution

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GP2M023A050N Datasheet (PDF)

 ..1. Size:552K  globalpower
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GP2M023A050N

GP2M023A050N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 23A

 8.1. Size:574K  globalpower
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GP2M023A050N

GP2M020A60N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 20A

 8.2. Size:415K  globalpower
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GP2M023A050N

GP2M020A050HGP2M020A050FN-channel MOSFETFeatures Low gate chargeBVDSS ID RDS(on) 100% avalanche tested500V 18A

 8.3. Size:573K  globalpower
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GP2M023A050N

GP2M020A050N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 500V 20A

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Datasheet: GP2M010A065X , GP2M011A090NG , GP2M012A060X , GP2M012A080NG , GP2M013A050F , GP2M020A050N , GP2M020A050X , GP2M020A060N , CS150N03A8 , GSM1012 , GSM1012E , GSM1013 , GSM1013E , GSM1016 , GSM1023 , GSM1024 , GSM1024E .

History: P6015AT

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