All MOSFET. GP2M023A050N Datasheet

 

GP2M023A050N MOSFET. Datasheet pdf. Equivalent


   Type Designator: GP2M023A050N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 347 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 23 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 64 nC
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
   Package: TO-3PN

 GP2M023A050N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GP2M023A050N Datasheet (PDF)

 ..1. Size:552K  globalpower
 gp2m023a050n.pdf

GP2M023A050N GP2M023A050N

GP2M023A050N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 23A

 8.1. Size:574K  globalpower
 gp2m020a060n.pdf

GP2M023A050N GP2M023A050N

GP2M020A60N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 20A

 8.2. Size:415K  globalpower
 gp2m020a050x.pdf

GP2M023A050N GP2M023A050N

GP2M020A050HGP2M020A050FN-channel MOSFETFeatures Low gate chargeBVDSS ID RDS(on) 100% avalanche tested500V 18A

 8.3. Size:573K  globalpower
 gp2m020a050n.pdf

GP2M023A050N GP2M023A050N

GP2M020A050N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 500V 20A

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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