GSM1072 Datasheet. Specs and Replacement

Type Designator: GSM1072

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: SOT-723

GSM1072 substitution

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GSM1072 datasheet

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GSM1072

GSM1072 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1072, N-Channel enhancement mode 20V/0.8A,RDS(ON)=360m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.7A,RDS(ON)=420m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/0.6A,RDS(ON)=560m @VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited for low ... See More ⇒

 0.1. Size:515K  globaltech semi
 gsm1072e.pdf pdf_icon

GSM1072

GSM1072E 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1072E, N-Channel enhancement mode 20V/0.8A,RDS(ON)=360m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.7A,RDS(ON)=420m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/0.6A,RDS(ON)=560m @VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited for lo... See More ⇒

 8.1. Size:625K  globaltech semi
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GSM1072

GSM1073E 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1073E, P-Channel enhancement mode -20V/-0.6A,RDS(ON)=800m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-0.5A,RDS(ON)=950m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-0.4A,RDS(ON)=1250m @VGS=-1.8V Low Offset (Error) Voltage These devices are particularly sui... See More ⇒

 8.2. Size:957K  globaltech semi
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GSM1072

GSM1073 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1073, P-Channel enhancement mode -20V/-0.45A,RDS(ON)=620m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-0.35A,RDS(ON)=860m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-0.25A,RDS(ON)=1450m @VGS=-1.8V Low Offset (Error) Voltage These devices are part... See More ⇒

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Detailed specifications: GSM1013E, GSM1016, GSM1023, GSM1024, GSM1024E, GSM1026S, GSM1032, GSM1034, IRF520, GSM1072E, GSM1073, GSM1073E, GSM1303, GSM1304, GSM1304E, GSM1306, GSM1330S

Keywords - GSM1072 MOSFET specs

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