GSM1072 - параметры транзистора MOSFET, его аналоги, datasheet

GSM1072 Datasheet (PDF)

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GSM1072 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1072, N-Channel enhancement mode 20V/0.8A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.7A,RDS(ON)=420m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/0.6A,RDS(ON)=560m@VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited for low

0.1. Size:515K globaltech semi
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GSM1072E 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM1072E, N-Channel enhancement mode 20V/0.8A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/0.7A,RDS(ON)=420m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/0.6A,RDS(ON)=560m@VGS=1.8V Low Offset (Error) Voltage These devices are particularly suited for lo

8.1. Size:625K globaltech semi
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GSM1073E 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1073E, P-Channel enhancement mode -20V/-0.6A,RDS(ON)=800m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-0.5A,RDS(ON)=950m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-0.4A,RDS(ON)=1250m@VGS=-1.8V Low Offset (Error) Voltage These devices are particularly sui

8.2. Size:957K globaltech semi
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GSM1073 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM1073, P-Channel enhancement mode -20V/-0.45A,RDS(ON)=620m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-0.35A,RDS(ON)=860m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-0.25A,RDS(ON)=1450m@VGS=-1.8V Low Offset (Error) Voltage These devices are part

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .