GSM1563 Datasheet. Specs and Replacement

Type Designator: GSM1563

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: SOT-363

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GSM1563 datasheet

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GSM1563

20V N & P Pair Enhancement Mode MOSFET Product Description Features GSM1563, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 20V/1.0A,RDS(ON)=280m @VGS=4.5V provide excellent RDS(ON), low gate charge. 20V/0.8A,RDS(ON)=340m @VGS=2.5V These devices are particularly suited for low 20V/0.7A,RDS(ON)=580m @VGS=1.8V voltage power management, such a... See More ⇒

Detailed specifications: GSM1303, GSM1304, GSM1304E, GSM1306, GSM1330S, GSM1413, GSM1433, GSM1443, 7N60, GSM1810, GSM1912, GSM1913, GSM2014, GSM2301, GSM2301A, GSM2301AS, GSM2301S

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