All MOSFET. GSM1563 Datasheet

 

GSM1563 Datasheet and Replacement


   Type Designator: GSM1563
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: SOT-363
 

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GSM1563 Datasheet (PDF)

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GSM1563

20V N & P Pair Enhancement Mode MOSFET Product Description Features GSM1563, N & P Pair enhancement mode N-ChannelMOSFET, uses Advanced Trench Technology to 20V/1.0A,RDS(ON)=280m@VGS=4.5V provide excellent RDS(ON), low gate charge. 20V/0.8A,RDS(ON)=340m@VGS=2.5V These devices are particularly suited for low 20V/0.7A,RDS(ON)=580m@VGS=1.8V voltage power management, such a

Datasheet: GSM1303 , GSM1304 , GSM1304E , GSM1306 , GSM1330S , GSM1413 , GSM1433 , GSM1443 , MMIS60R580P , GSM1810 , GSM1912 , GSM1913 , GSM2014 , GSM2301 , GSM2301A , GSM2301AS , GSM2301S .

History: FQU11P06TU | STRH40N6 | SDF460JED | 2SK2884B | AP9430AGYT-HF | IMW120R350M1H | 2SK3484

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