GSM2014 Datasheet and Replacement
Type Designator: GSM2014
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 285 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO-252-2L
GSM2014 substitution
GSM2014 Datasheet (PDF)
gsm2014.pdf
GSM2014 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2014, N-Channel enhancement mode 20V/10A,RDS(ON)=14m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/8A,RDS(ON)=17m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/5A,RDS(ON)=21m@VGS=1.8V Super high density cell design for extremely These devices are particularl
Datasheet: GSM1330S , GSM1413 , GSM1433 , GSM1443 , GSM1563 , GSM1810 , GSM1912 , GSM1913 , 60N06 , GSM2301 , GSM2301A , GSM2301AS , GSM2301S , GSM2302AS , GSM2302S , GSM2303 , GSM2303A .
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