All MOSFET. GSM2014 Datasheet

 

GSM2014 MOSFET. Datasheet pdf. Equivalent

Type Designator: GSM2014

Marking Code: 2014

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 13 nC

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 285 pF

Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm

Package: TO-252-2L

GSM2014 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GSM2014 Datasheet (PDF)

1.1. gsm2014.pdf Size:969K _update-mosfet

GSM2014
GSM2014

GSM2014 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2014, N-Channel enhancement mode  20V/10A,RDS(ON)=14mΩ@VGS=4.5V MOSFET, uses Advanced Trench Technology to  20V/8A,RDS(ON)=17mΩ@VGS=2.5V provide excellent RDS(ON), low gate charge.  20V/5A,RDS(ON)=21mΩ@VGS=1.8V  Super high density cell design for extremely These devices are particularl

1.2. gsm2014.pdf Size:969K _globaltech_semi

GSM2014
GSM2014

GSM2014 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2014, N-Channel enhancement mode  20V/10A,RDS(ON)=14mΩ@VGS=4.5V MOSFET, uses Advanced Trench Technology to  20V/8A,RDS(ON)=17mΩ@VGS=2.5V provide excellent RDS(ON), low gate charge.  20V/5A,RDS(ON)=21mΩ@VGS=1.8V  Super high density cell design for extremely These devices are particularl

 

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top