GSM2519 Datasheet. Specs and Replacement

Type Designator: GSM2519

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: DFN2X2-6L

GSM2519 substitution

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GSM2519 datasheet

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GSM2519

GSM2519 GSM2519 20V N&P Pair Enhancement Mode MOSFET Product Description Features GSM2519, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 20V/4.5A,RDS(ON)=50m @VGS=4.5V provide excellent RDS(ON), low gate charge. 20V/3.6A,RDS(ON)=60m @VGS=2.5V 20V/2.4A,RDS(ON)=80m @VGS=1.8V These devices are particularly suited for low P-Channel voltage ... See More ⇒

Detailed specifications: GSM2337A, GSM2341, GSM2343A, GSM2354, GSM2367AS, GSM2367S, GSM2376, GSM2379, STP75NF75, GSM2604, GSM2911, GSM2912, GSM2913W, GSM3009S, GSM3015S, GSM3016S, GSM3019S

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.