All MOSFET. GSM2519 Datasheet

 

GSM2519 Datasheet and Replacement


   Type Designator: GSM2519
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 6.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: DFN2X2-6L
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GSM2519 Datasheet (PDF)

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GSM2519

GSM2519 GSM2519 20V N&P Pair Enhancement Mode MOSFETProduct Description Features GSM2519, N & P Pair enhancement mode N-ChannelMOSFET, uses Advanced Trench Technology to 20V/4.5A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. 20V/3.6A,RDS(ON)=60m@VGS=2.5V 20V/2.4A,RDS(ON)=80m@VGS=1.8V These devices are particularly suited for low P-Channelvoltage

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History: 12N80G-T3P-T | FQPF3P20 | IRFR310T | TPB60R840C | BSO301SPH | STL30N10F7 | IRF533FI

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