GSM2604 Datasheet. Specs and Replacement

Type Designator: GSM2604

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO-252-2L

GSM2604 substitution

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GSM2604 datasheet

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GSM2604

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM2604, N-Channel enhancement mode 40V/20A,RDS(ON)= 22m @VGS=10V MOSFET, uses Advanced Trench Technology to 40V/12A,RDS(ON)= 40m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power ... See More ⇒

Detailed specifications: GSM2341, GSM2343A, GSM2354, GSM2367AS, GSM2367S, GSM2376, GSM2379, GSM2519, 2N7002, GSM2911, GSM2912, GSM2913W, GSM3009S, GSM3015S, GSM3016S, GSM3019S, GSM3025S

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