All MOSFET. GSM2604 Datasheet

 

GSM2604 Datasheet and Replacement


   Type Designator: GSM2604
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO-252-2L
 

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GSM2604 Datasheet (PDF)

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GSM2604

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM2604, N-Channel enhancement mode 40V/20A,RDS(ON)= 22m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/12A,RDS(ON)= 40m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

Datasheet: GSM2341 , GSM2343A , GSM2354 , GSM2367AS , GSM2367S , GSM2376 , GSM2379 , GSM2519 , 2N7002 , GSM2911 , GSM2912 , GSM2913W , GSM3009S , GSM3015S , GSM3016S , GSM3019S , GSM3025S .

History: AP50P04DF | AM50P06-15D

Keywords - GSM2604 MOSFET datasheet

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