All MOSFET. GSM3679S Datasheet

 

GSM3679S Datasheet and Replacement


   Type Designator: GSM3679S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 495 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-252-2L
 

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GSM3679S Datasheet (PDF)

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GSM3679S

GSM3679S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3679S, P-Channel enhancement mode -30V/-20A,RDS(ON)=10m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-15A,RDS(ON)=15m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for l

Datasheet: GSM3459 , GSM3460 , GSM3466 , GSM3481S , GSM3484 , GSM3484S , GSM3485 , GSM3497 , IRFZ44N , GSM3804 , GSM3806W , GSM3814W , GSM3911W , GSM3981 , GSM3993 , GSM4048WS , GSM4102W .

History: AP6N12MI | GSM3806W

Keywords - GSM3679S MOSFET datasheet

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