All MOSFET. GSM3679S Datasheet

 

GSM3679S Datasheet and Replacement


   Type Designator: GSM3679S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 495 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-252-2L
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GSM3679S Datasheet (PDF)

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GSM3679S

GSM3679S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3679S, P-Channel enhancement mode -30V/-20A,RDS(ON)=10m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-15A,RDS(ON)=15m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for l

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: STD30PF03L | DMTH8003SPS-13 | NCE8651Q | MEM2402 | IXFH110N10P | RSE002P03TL | FC8V36060L

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