GSM3679S Datasheet. Specs and Replacement

Type Designator: GSM3679S

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 495 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO-252-2L

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GSM3679S datasheet

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GSM3679S

GSM3679S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3679S, P-Channel enhancement mode -30V/-20A,RDS(ON)=10m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-15A,RDS(ON)=15m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for l... See More ⇒

Detailed specifications: GSM3459, GSM3460, GSM3466, GSM3481S, GSM3484, GSM3484S, GSM3485, GSM3497, IRFZ44N, GSM3804, GSM3806W, GSM3814W, GSM3911W, GSM3981, GSM3993, GSM4048WS, GSM4102W

Keywords - GSM3679S MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.