GSM3806W Datasheet and Replacement. Cross Reference Search

GSM3806W Datasheet (PDF)

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GSM3806W GSM3806W 20V N-Channel Enhancement Mode MOSFEProduct Description Features GSM3806W, N-Channel enhancement mode 20V/9A,RDS(ON)=26m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/8A,RDS(ON)=32m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/6A,RDS(ON)=42m@VGS=1.8V Super high density cell design for extremelyThese devices are par

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40V P-Channel Enhancement Mode MOSFET Product Description Features GSM3804, P-Channel enhancement mode -40V/-10A,RDS(ON)= 38m@VGS= -10V MOSFET, uses Advanced Trench Technology to -40V/ -8A,RDS(ON)= 54m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS(ON) voltage

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GSM3814W GSM3814W 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM3814W, N-Channel enhancement mode 20V/14A,RDS(ON)=14m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/12A,RDS(ON)=18m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/10A,RDS(ON)=30m@VGS=1.8V Super high density cell design for extremelyThese devices ar

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .