GSM3814W MOSFET. Datasheet pdf. Equivalent
Type Designator: GSM3814W
Marking Code: 3814W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 285 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: DFN3X3-8L
GSM3814W Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GSM3814W Datasheet (PDF)
gsm3814w.pdf
GSM3814W GSM3814W 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM3814W, N-Channel enhancement mode 20V/14A,RDS(ON)=14m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/12A,RDS(ON)=18m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/10A,RDS(ON)=30m@VGS=1.8V Super high density cell design for extremelyThese devices ar
gsm3804.pdf
40V P-Channel Enhancement Mode MOSFET Product Description Features GSM3804, P-Channel enhancement mode -40V/-10A,RDS(ON)= 38m@VGS= -10V MOSFET, uses Advanced Trench Technology to -40V/ -8A,RDS(ON)= 54m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS(ON) voltage
gsm3806w.pdf
GSM3806W GSM3806W 20V N-Channel Enhancement Mode MOSFEProduct Description Features GSM3806W, N-Channel enhancement mode 20V/9A,RDS(ON)=26m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/8A,RDS(ON)=32m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/6A,RDS(ON)=42m@VGS=1.8V Super high density cell design for extremelyThese devices are par
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
