All MOSFET. GSM4048WS Datasheet

 

GSM4048WS Datasheet and Replacement


   Type Designator: GSM4048WS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: SOP-8P
      - MOSFET Cross-Reference Search

 

GSM4048WS Datasheet (PDF)

 ..1. Size:913K  globaltech semi
 gsm4048ws.pdf pdf_icon

GSM4048WS

GSM4048WS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4048WS, N-Channel enhancement mode 30V/15A,RDS(ON)=8m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=10m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SMG2325P | SVGP20110NSTR | LSDN65R650HT | MXP4004AT | 2SK1947 | 2SK3513S | MEE42942-G

Keywords - GSM4048WS MOSFET datasheet

 GSM4048WS cross reference
 GSM4048WS equivalent finder
 GSM4048WS lookup
 GSM4048WS substitution
 GSM4048WS replacement

 

 
Back to Top

 


 
.