All MOSFET. GSM4048WS Datasheet

 

GSM4048WS MOSFET. Datasheet pdf. Equivalent


   Type Designator: GSM4048WS
   Marking Code: 4048WS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: SOP-8P

 GSM4048WS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GSM4048WS Datasheet (PDF)

 ..1. Size:913K  globaltech semi
 gsm4048ws.pdf

GSM4048WS GSM4048WS

GSM4048WS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4048WS, N-Channel enhancement mode 30V/15A,RDS(ON)=8m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=10m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: DMC1028UFDB | DMG3415UFY4

 

 
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