GSM4048WS MOSFET. Datasheet pdf. Equivalent
Type Designator: GSM4048WS
Marking Code: 4048WS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 300 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: SOP-8P
GSM4048WS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GSM4048WS Datasheet (PDF)
..1. Size:913K globaltech semi
gsm4048ws.pdf
gsm4048ws.pdf
GSM4048WS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4048WS, N-Channel enhancement mode 30V/15A,RDS(ON)=8m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=10m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
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