All MOSFET. GSM4048WS Datasheet

 

GSM4048WS Datasheet and Replacement


   Type Designator: GSM4048WS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: SOP-8P
 

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GSM4048WS Datasheet (PDF)

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GSM4048WS

GSM4048WS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4048WS, N-Channel enhancement mode 30V/15A,RDS(ON)=8m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=10m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

Datasheet: GSM3497 , GSM3679S , GSM3804 , GSM3806W , GSM3814W , GSM3911W , GSM3981 , GSM3993 , 50N06 , GSM4102W , GSM4124WS , GSM4134 , GSM4134W , GSM4172S , GSM4172WS , GSM4210 , GSM4210W .

History: AG2N60S | AU4N60S

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