All MOSFET. GSM4228 Datasheet

 

GSM4228 Datasheet and Replacement


   Type Designator: GSM4228
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 285 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SOP-8P
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GSM4228 Datasheet (PDF)

 ..1. Size:937K  globaltech semi
 gsm4228.pdf pdf_icon

GSM4228

GSM4228 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM4228, N-Channel enhancement mode 20V/8A,RDS(ON)=12m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/6A,RDS(ON)=15m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/5A,RDS(ON)=20m@VGS=1.8V Super high density cell design for extremely These devices are particularly

 9.1. Size:937K  globaltech semi
 gsm4210w.pdf pdf_icon

GSM4228

GSM4210W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4210W, N-Channel enhancement mode 30V/6.8A,RDS(ON)=32m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.6A,RDS(ON)=40m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.2. Size:824K  globaltech semi
 gsm4214.pdf pdf_icon

GSM4228

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4214, N-Channel enhancement mode 30V/9A,RDS(ON)=16m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=20m@VGS=4.5V provide excellent RDS(ON), low gate charge. These Super high density cell design for extremely devices are particularly suited for low voltage low RDS (ON) power mana

 9.3. Size:794K  globaltech semi
 gsm4214w.pdf pdf_icon

GSM4228

GSM4214W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4214W, N-Channel enhancement mode 30V/9A,RDS(ON)=16m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=18m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low S

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Keywords - GSM4228 MOSFET datasheet

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