GSM4228 - Даташиты. Аналоги. Основные параметры

GSM4228 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM4228, N-Channel enhancement mode 20V/8A,RDS(ON)=12m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/6A,RDS(ON)=15m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/5A,RDS(ON)=20m @VGS=1.8V Super high density cell design for extremely These devices are particularly

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4214, N-Channel enhancement mode 30V/9A,RDS(ON)=16m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=20m @VGS=4.5V provide excellent RDS(ON), low gate charge. These Super high density cell design for extremely devices are particularly suited for low voltage low RDS (ON) power mana

GSM4214W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4214W, N-Channel enhancement mode 30V/9A,RDS(ON)=16m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=18m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low S

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4210, N-Channel enhancement mode 30V/6.8A,RDS(ON)=35m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.6A,RDS(ON)=42m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

GSM4248W 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM4248W, N-Channel enhancement mode 20V/6.0A,RDS(ON)=28m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/5.0A,RDS(ON)=32m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/4.0A,RDS(ON)=42m @VGS=1.8V Super high density cell design for extremely These devices are part