Справочник MOSFET. GSM4228

 

GSM4228 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: GSM4228

Маркировка: 4228

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 2.8 W

Предельно допустимое напряжение сток-исток (Uds): 20 V

Предельно допустимое напряжение затвор-исток (Ugs): 12 V

Пороговое напряжение включения Ugs(th): 1 V

Максимально допустимый постоянный ток стока (Id): 8 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 13 nC

Время нарастания (tr): 10 ns

Выходная емкость (Cd): 285 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.012 Ohm

Тип корпуса: SOP-8P

Аналог (замена) для GSM4228

 

 

GSM4228 Datasheet (PDF)

1.1. gsm4228.pdf Size:937K _update-mosfet

GSM4228 GSM4228

GSM4228 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM4228, N-Channel enhancement mode  20V/8A,RDS(ON)=12mΩ@VGS=4.5V MOSFET, uses Advanced Trench Technology to  20V/6A,RDS(ON)=15mΩ@VGS=2.5V provide excellent RDS(ON), low gate charge.  20V/5A,RDS(ON)=20mΩ@VGS=1.8V  Super high density cell design for extremely These devices are particularly

5.1. gsm4214.pdf Size:824K _update-mosfet

GSM4228 GSM4228

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4214, N-Channel enhancement mode  30V/9A,RDS(ON)=16mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/8A,RDS(ON)=20mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge. These  Super high density cell design for extremely devices are particularly suited for low voltage low RDS (ON) power mana

5.2. gsm4248w.pdf Size:892K _update-mosfet

GSM4228 GSM4228

GSM4248W 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM4248W, N-Channel enhancement mode  20V/6.0A,RDS(ON)=28mΩ@VGS=4.5V MOSFET, uses Advanced Trench Technology to  20V/5.0A,RDS(ON)=32mΩ@VGS=2.5V provide excellent RDS(ON), low gate charge.  20V/4.0A,RDS(ON)=42mΩ@VGS=1.8V  Super high density cell design for extremely These devices are part

 5.3. gsm4210w.pdf Size:937K _update-mosfet

GSM4228 GSM4228

GSM4210W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4210W, N-Channel enhancement mode  30V/6.8A,RDS(ON)=32mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/5.6A,RDS(ON)=40mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

5.4. gsm4210.pdf Size:966K _update-mosfet

GSM4228 GSM4228

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4210, N-Channel enhancement mode  30V/6.8A,RDS(ON)=35mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/5.6A,RDS(ON)=42mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 5.5. gsm4214w.pdf Size:794K _update-mosfet

GSM4228 GSM4228

GSM4214W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4214W, N-Channel enhancement mode  30V/9A,RDS(ON)=16mΩ@VGS=10V MOSFET, uses Advanced Trench Technology to  30V/8A,RDS(ON)=18mΩ@VGS=4.5V provide excellent RDS(ON), low gate charge.  Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low  S

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