All MOSFET. PHP36N06E Datasheet

 

PHP36N06E Datasheet and Replacement


   Type Designator: PHP36N06E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 41 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: TO220AB
 

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PHP36N06E Datasheet (PDF)

 ..1. Size:51K  philips
 php36n06e.pdf pdf_icon

PHP36N06E

Philips Semiconductors Product specification PowerMOS transistor PHP36N06E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 41 Aautomotive applications, Switched Ptot Total power dissipation 125 WMode

 ..2. Size:51K  philips
 php36n06e 1.pdf pdf_icon

PHP36N06E

Philips Semiconductors Product specification PowerMOS transistor PHP36N06E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 41 Aautomotive applications, Switched Ptot Total power dissipation 125 WMode

 7.1. Size:92K  philips
 phd36n03lt php36n03lt.pdf pdf_icon

PHP36N06E

PHD/PHP36N03LTN-channel TrenchMOS logic level FETRev. 02 8 June 2006 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Logic level compatible Low gate charge1.3 Applications DC-to-DC converters Switched-mode power supplies1.4 Quick r

Datasheet: GSM4228 , GSM4248W , GSM4401S , GSM4403 , GSM4412 , GSM4412W , GSM4422 , MTB36N06V , AON7408 , PHB36N06E , FTD36N06N , SFP65N06 , IPI16CN10N , GSM4424 , GSM4424W , GSM4435 , GSM4435S .

History: FDMS86263P

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