All MOSFET. PHP36N06E Datasheet

 

PHP36N06E Datasheet and Replacement


   Type Designator: PHP36N06E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 41 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: TO220AB
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PHP36N06E Datasheet (PDF)

 ..1. Size:51K  philips
php36n06e.pdf pdf_icon

PHP36N06E

Philips Semiconductors Product specification PowerMOS transistor PHP36N06E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 41 Aautomotive applications, Switched Ptot Total power dissipation 125 WMode

 ..2. Size:51K  philips
php36n06e 1.pdf pdf_icon

PHP36N06E

Philips Semiconductors Product specification PowerMOS transistor PHP36N06E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 41 Aautomotive applications, Switched Ptot Total power dissipation 125 WMode

 7.1. Size:92K  philips
phd36n03lt php36n03lt.pdf pdf_icon

PHP36N06E

PHD/PHP36N03LTN-channel TrenchMOS logic level FETRev. 02 8 June 2006 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Logic level compatible Low gate charge1.3 Applications DC-to-DC converters Switched-mode power supplies1.4 Quick r

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History: SIHFIB6N60A | IRFR3709ZPBF | KF4N65FM | KF4N20LD | 110N10 | STK850 | BSF053N03LTG

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