PHB36N06E Datasheet and Replacement
Type Designator: PHB36N06E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 41 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 420 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: SOT404
PHB36N06E substitution
PHB36N06E Datasheet (PDF)
phb36n06e 1.pdf
Philips Semiconductors Product specification PowerMOS transistor PHB36N06E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmount applications. ID Drain current (DC) 41 AThe device is intended for use in Ptot Total power dissipation 125 W
phb36n06e.pdf
Philips Semiconductors Product specification PowerMOS transistor PHB36N06E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmount applications. ID Drain current (DC) 41 AThe device is intended for use in Ptot Total power dissipation 125 W
Datasheet: GSM4248W , GSM4401S , GSM4403 , GSM4412 , GSM4412W , GSM4422 , MTB36N06V , PHP36N06E , IRF630 , FTD36N06N , SFP65N06 , IPI16CN10N , GSM4424 , GSM4424W , GSM4435 , GSM4435S , GSM4435W .
History: IRFH3707PBF-1
Keywords - PHB36N06E MOSFET datasheet
PHB36N06E cross reference
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PHB36N06E substitution
PHB36N06E replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IRFH3707PBF-1
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