All MOSFET. PHB36N06E Datasheet

 

PHB36N06E Datasheet and Replacement


   Type Designator: PHB36N06E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 41 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: SOT404
 

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PHB36N06E Datasheet (PDF)

 ..1. Size:54K  philips
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PHB36N06E

Philips Semiconductors Product specification PowerMOS transistor PHB36N06E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmount applications. ID Drain current (DC) 41 AThe device is intended for use in Ptot Total power dissipation 125 W

 ..2. Size:54K  philips
 phb36n06e.pdf pdf_icon

PHB36N06E

Philips Semiconductors Product specification PowerMOS transistor PHB36N06E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 60 Vmount applications. ID Drain current (DC) 41 AThe device is intended for use in Ptot Total power dissipation 125 W

Datasheet: GSM4248W , GSM4401S , GSM4403 , GSM4412 , GSM4412W , GSM4422 , MTB36N06V , PHP36N06E , 7N65 , FTD36N06N , SFP65N06 , IPI16CN10N , GSM4424 , GSM4424W , GSM4435 , GSM4435S , GSM4435W .

History: FCPF850N80Z

Keywords - PHB36N06E MOSFET datasheet

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