PHB36N06E Datasheet. Specs and Replacement

Type Designator: PHB36N06E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 41 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm

Package: SOT404

PHB36N06E substitution

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PHB36N06E datasheet

 ..1. Size:54K  philips
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PHB36N06E

Philips Semiconductors Product specification PowerMOS transistor PHB36N06E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 60 V mount applications. ID Drain current (DC) 41 A The device is intended for use in Ptot Total power dissipation 125 W... See More ⇒

 ..2. Size:54K  philips
 phb36n06e.pdf pdf_icon

PHB36N06E

Philips Semiconductors Product specification PowerMOS transistor PHB36N06E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 60 V mount applications. ID Drain current (DC) 41 A The device is intended for use in Ptot Total power dissipation 125 W... See More ⇒

Detailed specifications: GSM4248W, GSM4401S, GSM4403, GSM4412, GSM4412W, GSM4422, MTB36N06V, PHP36N06E, IRF630, FTD36N06N, SFP65N06, IPI16CN10N, GSM4424, GSM4424W, GSM4435, GSM4435S, GSM4435W

Keywords - PHB36N06E MOSFET specs

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