All MOSFET. FTD36N06N Datasheet

 

FTD36N06N Datasheet and Replacement


   Type Designator: FTD36N06N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 117 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO252
 

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FTD36N06N Datasheet (PDF)

 ..1. Size:370K  inpower semi
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FTD36N06N

FTD36N06NN-Channel MOSFET PbLead Free Package and FinishApplications:VDSS RDS(ON) (Typ.) IDAutomotiveDC Motor Control60V 28 m 25ADC-DC Converters and Off-Line UPSFeatures: RoHS Compliant D Low ON ResistanceD Low Gate Charge Peak Current vs Pulse Width CurveGGSTO-252Ordering InformationNot to Scale SPART NUMBER PACKAGE BRAND

 ..2. Size:711K  cn vbsemi
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FTD36N06N

FTD36N06Nwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n

Datasheet: GSM4401S , GSM4403 , GSM4412 , GSM4412W , GSM4422 , MTB36N06V , PHP36N06E , PHB36N06E , K3569 , SFP65N06 , IPI16CN10N , GSM4424 , GSM4424W , GSM4435 , GSM4435S , GSM4435W , GSM4435WS .

History: SNA3100L10NL | NTMFS5C612NL

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