FTD36N06N Datasheet. Specs and Replacement

Type Designator: FTD36N06N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 117 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: TO252

FTD36N06N substitution

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FTD36N06N datasheet

 ..1. Size:370K  inpower semi
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FTD36N06N

FTD36N06N N-Channel MOSFET Pb Lead Free Package and Finish Applications VDSS RDS(ON) (Typ.) ID Automotive DC Motor Control 60V 28 m 25A DC-DC Converters and Off-Line UPS Features RoHS Compliant D Low ON Resistance D Low Gate Charge Peak Current vs Pulse Width Curve G G S TO-252 Ordering Information Not to Scale S PART NUMBER PACKAGE BRAND ... See More ⇒

 ..2. Size:711K  cn vbsemi
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FTD36N06N

FTD36N06N www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n... See More ⇒

Detailed specifications: GSM4401S, GSM4403, GSM4412, GSM4412W, GSM4422, MTB36N06V, PHP36N06E, PHB36N06E, IRF9540, SFP65N06, IPI16CN10N, GSM4424, GSM4424W, GSM4435, GSM4435S, GSM4435W, GSM4435WS

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.