All MOSFET. SFP65N06 Datasheet

 

SFP65N06 Datasheet and Replacement


   Type Designator: SFP65N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 772 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO220
 

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SFP65N06 Datasheet (PDF)

 ..1. Size:548K  samsung
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SFP65N06

Advanced Power MOSFETPRELIMINARYFEATURESBVDSS = 30 V Avalanche Rugged TechnologyRDS(on) = 0.016 Rugged Gate Oxide Technology Lower Input CapacitanceID = 65 A Improved Gate Charge Extended Safe Operating AreaTO-220 Lower Leakage Current : 10 A (Max.) @ VDS = 30V Lower RDS(ON) : 0.011 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characte

Datasheet: GSM4403 , GSM4412 , GSM4412W , GSM4422 , MTB36N06V , PHP36N06E , PHB36N06E , FTD36N06N , IRLZ44N , IPI16CN10N , GSM4424 , GSM4424W , GSM4435 , GSM4435S , GSM4435W , GSM4435WS , GSM4440 .

History: SQJ410EP | SL2306

Keywords - SFP65N06 MOSFET datasheet

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