SFP65N06 Datasheet. Specs and Replacement

Type Designator: SFP65N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 142 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 772 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO220

SFP65N06 substitution

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SFP65N06 datasheet

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SFP65N06

Advanced Power MOSFET PRELIMINARY FEATURES BVDSS = 30 V Avalanche Rugged Technology RDS(on) = 0.016 Rugged Gate Oxide Technology Lower Input Capacitance ID = 65 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current 10 A (Max.) @ VDS = 30V Lower RDS(ON) 0.011 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characte... See More ⇒

Detailed specifications: GSM4403, GSM4412, GSM4412W, GSM4422, MTB36N06V, PHP36N06E, PHB36N06E, FTD36N06N, AON7408, IPI16CN10N, GSM4424, GSM4424W, GSM4435, GSM4435S, GSM4435W, GSM4435WS, GSM4440

Keywords - SFP65N06 MOSFET specs

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