IPI16CN10N Datasheet. Specs and Replacement

Type Designator: IPI16CN10N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 53 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 364 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO262

IPI16CN10N substitution

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IPI16CN10N datasheet

 ..1. Size:661K  infineon
 ipb16cn10n ipd16cn10n ipi16cn10n ipp16cn10n.pdf pdf_icon

IPI16CN10N

www.DataSheet4U.com IPB16CN10N G IPD16CN10N G IPI16CN10N G IPP16CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 16 m DS(on),max (TO252) Excellent gate charge x R product (FOM) DS(on) I 53 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified... See More ⇒

 ..2. Size:286K  inchange semiconductor
 ipi16cn10n.pdf pdf_icon

IPI16CN10N

isc N-Channel MOSFET Transistor IPI16CN10N FEATURES Static drain-source on-resistance RDS(on) 16m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒

 0.1. Size:906K  infineon
 ipb16cn10ng ipd16cn10ng ipi16cn10ng ipp16cn10ng.pdf pdf_icon

IPI16CN10N

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Detailed specifications: GSM4412, GSM4412W, GSM4422, MTB36N06V, PHP36N06E, PHB36N06E, FTD36N06N, SFP65N06, 2SK3878, GSM4424, GSM4424W, GSM4435, GSM4435S, GSM4435W, GSM4435WS, GSM4440, GSM4440W

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