GSM4634WS Datasheet and Replacement
Type Designator: GSM4634WS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 480 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
Package: SOP-8
GSM4634WS substitution
GSM4634WS Datasheet (PDF)
gsm4634ws.pdf

GSM4634WS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4634WS, N-Channel enhancement mode 30V/18A,RDS(ON)=5.8m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/15A,RDS(ON)=7.2m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON)
gsm4637w.pdf

GSM4637W 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4637W, P-Channel enhancement mode -40V/-6.8A,RDS(ON)=37m@VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-5.8A,RDS(ON)=54m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for
gsm4637.pdf

40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4637, P-Channel enhancement mode -40V/-6.8A,RDS(ON)= 37m@VGS= -10V OSFET, uses Advanced Trench Technology to -40V/-5.8A,RDS(ON)= 54m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volta
Datasheet: GSM4535 , GSM4535W , GSM4539S , GSM4539WS , GSM4546 , GSM4559 , GSM4599 , GSM4599W , IRFP450 , GSM4637 , GSM4637W , GSM4804 , GSM4822S , GSM4822WS , GSM4850WS , GSM4874WS , GSM4896 .
History: IRFE430
Keywords - GSM4634WS MOSFET datasheet
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History: IRFE430



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