All MOSFET. GSM5604 Datasheet

 

GSM5604 Datasheet and Replacement


   Type Designator: GSM5604
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO-252
 

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GSM5604 Datasheet (PDF)

 ..1. Size:1427K  globaltech semi
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GSM5604

GSM5604 40V N & P Pair Enhancement Mode MOSFET Product Description Features GSM5604, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 40V/15A,RDS(ON)=20m@VGS=10V provide excellent RDS(ON), low gate charge. 40V/12A,RDS(ON)=30m@VGS=4.5V P-Channel These devices are particularly suited for low -40V/-15A,RDS(ON)=38m@VGS=-10V volta

 8.1. Size:1213K  globaltech semi
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GSM5604

GSM5606 60V N & P Pair Enhancement Mode MOSFET Product Description Features GSM5606, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 60V/15A,RDS(ON)=42m@VGS=10V provide excellent RDS(ON), low gate charge. 60V/12A,RDS(ON)=50m@VGS=4.5V P-Channel These devices are particularly suited for low -60V/-15A,RDS(ON)=100m@VGS=-10V volt

Datasheet: GSM4953WS , GSM4996 , GSM4997 , GSM4998 , GSM4998W , GSM5004S , GSM5008S , GSM501DEA , IRF1405 , GSM5606 , GSM6202S , GSM6236S , GSM6332 , GSM6405 , GSM6405WS , GSM6424 , GSM6506S .

History: DMN2027USS | PMV37EN2 | 2SK1684 | BL4N65-P

Keywords - GSM5604 MOSFET datasheet

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