All MOSFET. GSM5606 Datasheet

 

GSM5606 Datasheet and Replacement


   Type Designator: GSM5606
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: TO-252
 

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GSM5606 Datasheet (PDF)

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GSM5606

GSM5606 60V N & P Pair Enhancement Mode MOSFET Product Description Features GSM5606, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 60V/15A,RDS(ON)=42m@VGS=10V provide excellent RDS(ON), low gate charge. 60V/12A,RDS(ON)=50m@VGS=4.5V P-Channel These devices are particularly suited for low -60V/-15A,RDS(ON)=100m@VGS=-10V volt

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GSM5606

GSM5604 40V N & P Pair Enhancement Mode MOSFET Product Description Features GSM5604, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 40V/15A,RDS(ON)=20m@VGS=10V provide excellent RDS(ON), low gate charge. 40V/12A,RDS(ON)=30m@VGS=4.5V P-Channel These devices are particularly suited for low -40V/-15A,RDS(ON)=38m@VGS=-10V volta

Datasheet: GSM4996 , GSM4997 , GSM4998 , GSM4998W , GSM5004S , GSM5008S , GSM501DEA , GSM5604 , 60N06 , GSM6202S , GSM6236S , GSM6332 , GSM6405 , GSM6405WS , GSM6424 , GSM6506S , GSM6520S .

History: FQD17P06TM | CED655 | SIHFB9N65A | SUM110N08-07P | AFN3406A | SSF2449 | CS540

Keywords - GSM5606 MOSFET datasheet

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