GSM5606 Datasheet. Specs and Replacement

Type Designator: GSM5606

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: TO-252

GSM5606 substitution

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GSM5606 datasheet

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GSM5606

GSM5606 60V N & P Pair Enhancement Mode MOSFET Product Description Features GSM5606, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 60V/15A,RDS(ON)=42m @VGS=10V provide excellent RDS(ON), low gate charge. 60V/12A,RDS(ON)=50m @VGS=4.5V P-Channel These devices are particularly suited for low -60V/-15A,RDS(ON)=100m @VGS=-10V volt... See More ⇒

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GSM5606

GSM5604 40V N & P Pair Enhancement Mode MOSFET Product Description Features GSM5604, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 40V/15A,RDS(ON)=20m @VGS=10V provide excellent RDS(ON), low gate charge. 40V/12A,RDS(ON)=30m @VGS=4.5V P-Channel These devices are particularly suited for low -40V/-15A,RDS(ON)=38m @VGS=-10V volta... See More ⇒

Detailed specifications: GSM4996, GSM4997, GSM4998, GSM4998W, GSM5004S, GSM5008S, GSM501DEA, GSM5604, IRLB3034, GSM6202S, GSM6236S, GSM6332, GSM6405, GSM6405WS, GSM6424, GSM6506S, GSM6520S

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