GSM6202S Datasheet. Specs and Replacement

Type Designator: GSM6202S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm

Package: DFN5X6-8L

GSM6202S substitution

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GSM6202S datasheet

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GSM6202S

GSM6202S GSM6202S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6202S, N-Channel enhancement mode 30V/15A,RDS(ON)=5.2m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=7.0m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited... See More ⇒

 9.1. Size:1363K  globaltech semi
 gsm6236s.pdf pdf_icon

GSM6202S

GSM6236S GSM6236S 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM6236S, N-Channel enhancement mode 40V/20A,RDS(ON)=3.3m @VGS=10V MOSFET, uses Advanced Trench Technology to 40V/15A,RDS(ON)=4.3m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low... See More ⇒

Detailed specifications: GSM4997, GSM4998, GSM4998W, GSM5004S, GSM5008S, GSM501DEA, GSM5604, GSM5606, IRF9640, GSM6236S, GSM6332, GSM6405, GSM6405WS, GSM6424, GSM6506S, GSM6520S, GSM6530S

Keywords - GSM6202S MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.