All MOSFET. GSM6202S Datasheet

 

GSM6202S Datasheet and Replacement


   Type Designator: GSM6202S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: DFN5X6-8L
 

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GSM6202S Datasheet (PDF)

 ..1. Size:952K  globaltech semi
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GSM6202S

GSM6202S GSM6202S 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM6202S, N-Channel enhancement mode 30V/15A,RDS(ON)=5.2m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=7.0m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited

 9.1. Size:1363K  globaltech semi
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GSM6202S

GSM6236S GSM6236S 40V N-Channel Enhancement Mode MOSFETProduct Description Features GSM6236S, N-Channel enhancement mode 40V/20A,RDS(ON)=3.3m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/15A,RDS(ON)=4.3m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited for low

Datasheet: GSM4997 , GSM4998 , GSM4998W , GSM5004S , GSM5008S , GSM501DEA , GSM5604 , GSM5606 , MMD60R360PRH , GSM6236S , GSM6332 , GSM6405 , GSM6405WS , GSM6424 , GSM6506S , GSM6520S , GSM6530S .

History: IRFF212

Keywords - GSM6202S MOSFET datasheet

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