GSM6332 Datasheet. Specs and Replacement

Type Designator: GSM6332

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: SOT-363

GSM6332 substitution

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GSM6332 datasheet

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GSM6332

N & P Pair Enhancement Mode MOSFET Product Description Features The GSM6332 is the N and P Pair enhancement N-Channel mode MOSFET, uses Advanced Trench 20V/1.0A,RDS(ON)=280m @VGS=4.5V Technology to provide excellent RDS(ON) , low gate 20V/0.8A,RDS(ON)=340m @VGS=2.5V charge. 20V/0.7A,RDS(ON)=580m @VGS=1.8V P-Channel These devices are particularly suited for low -20V/-1... See More ⇒

Detailed specifications: GSM4998W, GSM5004S, GSM5008S, GSM501DEA, GSM5604, GSM5606, GSM6202S, GSM6236S, AON7403, GSM6405, GSM6405WS, GSM6424, GSM6506S, GSM6520S, GSM6530S, GSM6561, GSM6562

Keywords - GSM6332 MOSFET specs

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