All MOSFET. GSM6332 Datasheet

 

GSM6332 Datasheet and Replacement


   Type Designator: GSM6332
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: SOT-363
 

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GSM6332 Datasheet (PDF)

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GSM6332

N & P Pair Enhancement Mode MOSFET Product Description Features The GSM6332 is the N and P Pair enhancement N-Channelmode MOSFET, uses Advanced Trench 20V/1.0A,RDS(ON)=280m@VGS=4.5V Technology to provide excellent RDS(ON) , low gate 20V/0.8A,RDS(ON)=340m@VGS=2.5V charge. 20V/0.7A,RDS(ON)=580m@VGS=1.8V P-ChannelThese devices are particularly suited for low -20V/-1

Datasheet: GSM4998W , GSM5004S , GSM5008S , GSM501DEA , GSM5604 , GSM5606 , GSM6202S , GSM6236S , EMB04N03H , GSM6405 , GSM6405WS , GSM6424 , GSM6506S , GSM6520S , GSM6530S , GSM6561 , GSM6562 .

History: AP4506GEH-HF | NX7002BK | RU1H130Q | AP6679BGH-HF | AP70SL380AH | FQD2N40TM | AO3457

Keywords - GSM6332 MOSFET datasheet

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