All MOSFET. GSM6405WS Datasheet

 

GSM6405WS Datasheet and Replacement


   Type Designator: GSM6405WS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TSOP-6
 

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GSM6405WS Datasheet (PDF)

 ..1. Size:1072K  globaltech semi
 gsm6405 gsm6405ws.pdf pdf_icon

GSM6405WS

30V P-Channel Enhancement Mode MOSFET Product Description Features GSM6405TSF, P-Channel enhancement mode -30V/-5.0A,RDS(ON)=55m@VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-4.0A,RDS(ON)=85m@VGS=-4.5V provide excellent RDS (ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.1. Size:1035K  globaltech semi
 gsm6424.pdf pdf_icon

GSM6405WS

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6424,N-Channel enhancement mode 30V/5.0A,RDS(ON)=38m@VGS=10.0V MOSFET, uses Advanced Trench Technology to 30V/4.0A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low TSOP-

Datasheet: GSM5008S , GSM501DEA , GSM5604 , GSM5606 , GSM6202S , GSM6236S , GSM6332 , GSM6405 , EMB04N03H , GSM6424 , GSM6506S , GSM6520S , GSM6530S , GSM6561 , GSM6562 , GSM6601 , GSM6602 .

Keywords - GSM6405WS MOSFET datasheet

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