GSM6405WS Datasheet. Specs and Replacement

Type Designator: GSM6405WS

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: TSOP-6

GSM6405WS substitution

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GSM6405WS datasheet

 ..1. Size:1072K  globaltech semi
 gsm6405 gsm6405ws.pdf pdf_icon

GSM6405WS

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 9.1. Size:1035K  globaltech semi
 gsm6424.pdf pdf_icon

GSM6405WS

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6424,N-Channel enhancement mode 30V/5.0A,RDS(ON)=38m @VGS=10.0V MOSFET, uses Advanced Trench Technology to 30V/4.0A,RDS(ON)=50m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low TSOP-... See More ⇒

Detailed specifications: GSM5008S, GSM501DEA, GSM5604, GSM5606, GSM6202S, GSM6236S, GSM6332, GSM6405, EMB04N03H, GSM6424, GSM6506S, GSM6520S, GSM6530S, GSM6561, GSM6562, GSM6601, GSM6602

Keywords - GSM6405WS MOSFET specs

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