GSM6801 Datasheet and Replacement. Cross Reference Search

GSM6801 Datasheet (PDF)

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30V P-Channel Enhancement Mode MOSFET Product Description Features GSM6801, P-Channel enhancement mode -30V/-3.8A,RDS(ON)=135m@VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-2.8A,RDS(ON)=175m@VGS=-4.5V provide excellent RDS(ON), low gate charge. -30V/-1.8A,RDS(ON)=245m@VGS=-2.5V These devices are particularly suited for low Super high density cell

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GSM6820 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM6820, N-Channel enhancement mode 20V/3.4A,RDS(ON)=58m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.0A,RDS(ON)=68m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.4A,RDS(ON)=88m@VGS=1.8V Super high density cell design for extremely These devices are partic

9.2. Size:894K globaltech semi
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GSM6830 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6830, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=85m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=155m@VGS=2.5V Super high density cell design for extremely These devices are partic

Datasheet: GSM6506S , GSM6520S , GSM6530S , GSM6561 , GSM6562 , GSM6601 , GSM6602 , GSM6604 , IRF3205 , GSM6820 , GSM6830 , GSM6993 , GSM7002 , GSM7002J , GSM7002K , GSM7002T , GSM7002W .