All MOSFET. GSM6820 Datasheet

 

GSM6820 MOSFET. Datasheet pdf. Equivalent


   Type Designator: GSM6820
   Marking Code: 20*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.8 V
   |Id|ⓘ - Maximum Drain Current: 3.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.2 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: TSOP-6

 GSM6820 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GSM6820 Datasheet (PDF)

 ..1. Size:943K  globaltech semi
gsm6820.pdf

GSM6820
GSM6820

GSM6820 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM6820, N-Channel enhancement mode 20V/3.4A,RDS(ON)=58m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.0A,RDS(ON)=68m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.4A,RDS(ON)=88m@VGS=1.8V Super high density cell design for extremely These devices are partic

 9.1. Size:894K  globaltech semi
gsm6830.pdf

GSM6820
GSM6820

GSM6830 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6830, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=85m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=155m@VGS=2.5V Super high density cell design for extremely These devices are partic

 9.2. Size:400K  globaltech semi
gsm6801.pdf

GSM6820
GSM6820

30V P-Channel Enhancement Mode MOSFET Product Description Features GSM6801, P-Channel enhancement mode -30V/-3.8A,RDS(ON)=135m@VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-2.8A,RDS(ON)=175m@VGS=-4.5V provide excellent RDS(ON), low gate charge. -30V/-1.8A,RDS(ON)=245m@VGS=-2.5V These devices are particularly suited for low Super high density cell

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