All MOSFET. GSM6993 Datasheet

 

GSM6993 Datasheet and Replacement


   Type Designator: GSM6993
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TSSOP-8P
 

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GSM6993 Datasheet (PDF)

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GSM6993

GSM6993 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM6993, P-Channel enhancement mode -30V/-4.8A,RDS(ON)=32m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-3.0A,RDS(ON)=38m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f

Datasheet: GSM6561 , GSM6562 , GSM6601 , GSM6602 , GSM6604 , GSM6801 , GSM6820 , GSM6830 , IRF840 , GSM7002 , GSM7002J , GSM7002K , GSM7002T , GSM7002W , GSM7106S , GSM7400 , GSM7402 .

History: HAT2275R | CED02N7G-1

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