GSM6993 Datasheet. Specs and Replacement

Type Designator: GSM6993

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TSSOP-8P

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GSM6993 datasheet

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GSM6993

GSM6993 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM6993, P-Channel enhancement mode -30V/-4.8A,RDS(ON)=32m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-3.0A,RDS(ON)=38m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f... See More ⇒

Detailed specifications: GSM6561, GSM6562, GSM6601, GSM6602, GSM6604, GSM6801, GSM6820, GSM6830, 20N60, GSM7002, GSM7002J, GSM7002K, GSM7002T, GSM7002W, GSM7106S, GSM7400, GSM7402

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.