GSM6993 MOSFET. Datasheet pdf. Equivalent
Type Designator: GSM6993
Marking Code: 6993
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8 V
|Id|ⓘ - Maximum Drain Current: 4.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 200 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TSSOP-8P
GSM6993 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GSM6993 Datasheet (PDF)
..1. Size:857K globaltech semi
gsm6993.pdf
gsm6993.pdf
GSM6993 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM6993, P-Channel enhancement mode -30V/-4.8A,RDS(ON)=32m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-3.0A,RDS(ON)=38m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f
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