GSM7106S Datasheet. Specs and Replacement

Type Designator: GSM7106S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm

Package: DFN33X33-8L

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GSM7106S datasheet

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GSM7106S

GSM7106S GSM7106S 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM7106S, N-Channel enhancement mode 20V/20A,RDS(ON)=6.2m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/15A,RDS(ON)=8.4m @VGS=2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suite... See More ⇒

Detailed specifications: GSM6820, GSM6830, GSM6993, GSM7002, GSM7002J, GSM7002K, GSM7002T, GSM7002W, IRF640, GSM7400, GSM7402, GSM7412, GSM7420, GSM7424S, GSM7472S, GSM7617WS, GSM7619WS

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