All MOSFET. GSM7106S Datasheet

 

GSM7106S Datasheet and Replacement


   Type Designator: GSM7106S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: DFN33X33-8L
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GSM7106S Datasheet (PDF)

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GSM7106S

GSM7106S GSM7106S 20V N-Channel Enhancement Mode MOSFETProduct Description Features GSM7106S, N-Channel enhancement mode 20V/20A,RDS(ON)=6.2m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/15A,RDS(ON)=8.4m@VGS=2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suite

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History: AM2314NE | WMM11N80M3 | FDMS9620S | IRFI7536G

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