GSM7106S MOSFET. Datasheet pdf. Equivalent
Type Designator: GSM7106S
Marking Code: 7106S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 350 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
Package: DFN33X33-8L
GSM7106S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GSM7106S Datasheet (PDF)
..1. Size:807K globaltech semi
gsm7106s.pdf
gsm7106s.pdf
GSM7106S GSM7106S 20V N-Channel Enhancement Mode MOSFETProduct Description Features GSM7106S, N-Channel enhancement mode 20V/20A,RDS(ON)=6.2m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/15A,RDS(ON)=8.4m@VGS=2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suite
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