All MOSFET. GSM7617WS Datasheet

 

GSM7617WS MOSFET. Datasheet pdf. Equivalent


   Type Designator: GSM7617WS
   Marking Code: 7617WS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: DFN33X33-8L

 GSM7617WS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GSM7617WS Datasheet (PDF)

 ..1. Size:923K  globaltech semi
 gsm7617ws.pdf

GSM7617WS GSM7617WS

GSM7617WS GSM7617WS 30V P-Channel Enhancement Mode MOSFETProduct Description Features GSM7617WS, P-Channel enhancement mode -30V/-15A,RDS(ON)=10m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-10A,RDS(ON)=16m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly

 8.1. Size:905K  globaltech semi
 gsm7619ws.pdf

GSM7617WS GSM7617WS

GSM7619WS GSM7619WS 30V P-Channel Enhancement Mode MOSFETProduct Description Features GSM7619WS, P-Channel enhancement mode -30V/-10A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-8A,RDS(ON)=28m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SI7848DP | SML30J130

 

 
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