All MOSFET. GSM7617WS Datasheet

 

GSM7617WS Datasheet and Replacement


   Type Designator: GSM7617WS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: DFN33X33-8L
 

 GSM7617WS substitution

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GSM7617WS Datasheet (PDF)

 ..1. Size:923K  globaltech semi
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GSM7617WS

GSM7617WS GSM7617WS 30V P-Channel Enhancement Mode MOSFETProduct Description Features GSM7617WS, P-Channel enhancement mode -30V/-15A,RDS(ON)=10m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-10A,RDS(ON)=16m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly

 8.1. Size:905K  globaltech semi
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GSM7617WS

GSM7619WS GSM7619WS 30V P-Channel Enhancement Mode MOSFETProduct Description Features GSM7619WS, P-Channel enhancement mode -30V/-10A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-8A,RDS(ON)=28m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly

Datasheet: GSM7002W , GSM7106S , GSM7400 , GSM7402 , GSM7412 , GSM7420 , GSM7424S , GSM7472S , IRFB4227 , GSM7619WS , GSM7923WS , GSM8205 , GSM8206 , GSM8411 , GSM8412 , GSM8439 , GSM8451 .

History: KIA8N60H-220F | IPI16CN10N | 2SK2870L | AFN9971 | MTN10N60FP | QM4301S | MTN10N65EA

Keywords - GSM7617WS MOSFET datasheet

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