GSM7617WS Datasheet. Specs and Replacement

Type Designator: GSM7617WS

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: DFN33X33-8L

GSM7617WS substitution

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GSM7617WS datasheet

 ..1. Size:923K  globaltech semi
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GSM7617WS

GSM7617WS GSM7617WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM7617WS, P-Channel enhancement mode -30V/-15A,RDS(ON)=10m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-10A,RDS(ON)=16m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly... See More ⇒

 8.1. Size:905K  globaltech semi
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GSM7617WS

GSM7619WS GSM7619WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM7619WS, P-Channel enhancement mode -30V/-10A,RDS(ON)=18m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-8A,RDS(ON)=28m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly ... See More ⇒

Detailed specifications: GSM7002W, GSM7106S, GSM7400, GSM7402, GSM7412, GSM7420, GSM7424S, GSM7472S, IRFB4227, GSM7619WS, GSM7923WS, GSM8205, GSM8206, GSM8411, GSM8412, GSM8439, GSM8451

Keywords - GSM7617WS MOSFET specs

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