GSM7619WS Datasheet and Replacement
Type Designator: GSM7619WS
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: DFN3X3-8L
GSM7619WS Datasheet (PDF)
gsm7619ws.pdf

GSM7619WS GSM7619WS 30V P-Channel Enhancement Mode MOSFETProduct Description Features GSM7619WS, P-Channel enhancement mode -30V/-10A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-8A,RDS(ON)=28m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly
gsm7617ws.pdf

GSM7617WS GSM7617WS 30V P-Channel Enhancement Mode MOSFETProduct Description Features GSM7617WS, P-Channel enhancement mode -30V/-15A,RDS(ON)=10m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-10A,RDS(ON)=16m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly
Datasheet: GSM7106S , GSM7400 , GSM7402 , GSM7412 , GSM7420 , GSM7424S , GSM7472S , GSM7617WS , P55NF06 , GSM7923WS , GSM8205 , GSM8206 , GSM8411 , GSM8412 , GSM8439 , GSM8451 , GSM8452 .
History: FHF10N80A
Keywords - GSM7619WS MOSFET datasheet
GSM7619WS cross reference
GSM7619WS equivalent finder
GSM7619WS lookup
GSM7619WS substitution
GSM7619WS replacement
History: FHF10N80A



LIST
Last Update
MOSFET: JMSL0803MG | JMSL0630AU | JMSL0630AGD | JMSL0630AG | JMSL0620AUE | JMSL0620AGEQ | JMSL0620AGE | JMSL0620AGDEQ | JMSL0620AGDE | JMSL0615PGDQ | JMSL0615AV | JMSL0615AUD | JMSL0615APD | JMSL0615AP | JMSL0615AGDQ | JMSL0615AGD
Popular searches
ss8550 transistor | irfp240 mosfet | tip141 | 2n404 | 2n4250 | d882 transistor equivalent | 17n80c3 | bc107 transistor